Matsushita Electric Industrial Co., Ltd.

Tomizo Matsuoka

Tsuneharu Nitta

Atsushi Abe

Yosuke Fujita

Takao Tohda

Shigeru Hayakawa

Jun Kuwata

Mamoru Takeda

Masahiro Nishikawa

Teruaki Shigeta

Yoshihiro Matsuo

Yoji Fukuda

Shigeru Horii

Akira Hochi

Fumio Fukushima

Ikunori Kobayashi

Masanori Fujimura

Shouzo Oshio

Shozo Oshio

Ziro Terada

Koji Matsunaga

Toru Higashi

Koji Kitamura

Takeshi Nishiura

Kazuyoshi Nakamura

A method for producing a trivalent rare earth ion-containing aluminate phosphor includes preparing a phosphor raw material comprising a granular aluminum containing compound in a phosphor raw material production process, heating the phosphor raw material in an oxidizing atmosphere at a predetermined temperature (e.g., 1500&deg; C. to 1800&deg; C.) so as to produce an intermediate phosphor in an intermediate phosphor production process. After the intermediate phosphor is cracked, the intermediate phosphor is heated in a reducing atmosphere at a predetermined temperature (e.g., 1400&deg; C. to 1800&deg; C.) in a trivalent rare earth ion-containing aluminate phosphor production process. The heating temperature in a reducing atmosphere is equal to or less than the heating temperature in an oxidizing atmosphere. A post treatment is performed, if necessary. Thus, a trivalent rare earth ion-containing aluminate phosphor can be obtained.

Trivalent rare earth ion-containing aluminate phosphor, a method for producing the same and a light emitting device using the same

A phosphor host compound is produced from a host compound material. Then, the host compound and a trivalent europium compound are reacted in a reducing atmosphere to generate a desired divalent europium-activated phosphor. If the divalent europium-activated phosphor is generated in this manner, a chemical reaction between the raw material for the host compound and the trivalent europium compound can be suppressed. Therefore, variations in the luminescent color among different production lots of the phosphor can be suppressed, and a phosphor with high color purity can be provided with high repeatability.

Method for producing a divalent europium-activated phosphor

An electrodeless discharge lamp has an arc tube which seals at least rare gas and one of luminous metal and metal halide thereinto, an opening of the arc tube being vacuum-sealed with at least molten glass, and an sealing unit of the arc tube being placed outside a cavity which supplies excitation energy to make said electrodeless discharge lamp emit a light.

Electrodeless discharge lamp and the manufacturing method thereof

An alkaline earth metal compound containing no fluorine atoms in its molecules, a rare earth compound containing no fluorine atoms in its molecules, and an aluminum compound containing no fluorine atoms in its molecules are fired in a high-temperature reducing atmosphere ranging from 1600.degree. to 2000.degree. C., so that an aluminate phosphor, the particle diameter and shape thereof are controlled, is provided. A mixture of 22 wt % of barium carbonate, 11 wt % of basic magnesium carbonate, 65 wt % of spherical alpha-alumina of 10 .mu.m diameter and 2 wt % of europium oxide is fired in a mixed gas atmosphere consisting of gaseous hydrogen of 5 volume % and gaseous nitrogen. The temperature is raised at 400.degree. C./hr, and lowered at 400.degree. C./hr after firing for two hours at 1700.degree. C. As a result, a spherical aluminate phosphor of 10 .mu.m diameter, which is expressed by formula (Ba.sub.0.9,Euo.sub.0.1)MgAl.sub.10 O.sub.17 is obtained.

Method for producing aluminate phosphor

The apparatus has a light transmitting bulb for confining a discharge therein, a fill sealed within the light transmitting bulb and including a rare gas and a metal halide emitting a continuous spectrum by molecular radiation, and a discharge excitation source for applying electrical energy to the fill and for starting and sustaining an arc discharge, and the metal halide includes one kind of halide selected from the group consisting of an indium halide, a gallium halide, and a thallium halide, or a mixture thereof, and in that the light transmitting bulb has no electrodes exposed in discharge space and further this construction utilizes the continuous spectrum of molecular radiation of the metal halide and thereby achieves high color rendering properties and high luminous efficacy simultaneously without using mercury as the fill.

Electrodeless hid lamp and electrodeless hid lamp system using the same

A thin-film transistor array is suited for the manufacture of an image display utilizing liquid crystal. In the thin-film transistor array, a first electrically conductive layer made principally of aluminum is selectively formed on one surface of a substrate. The first electrically conductive layer contains, as an impurity, a high-melting point metal which can be anodized. An oxide layer is formed by an anodization process on the first electrically conductive layer, and the first insulating layer is formed on the oxide layer so as to overlay the substrate. Furthermore, a first semiconductor layer made principally of silicon is selectively formed on the insulating layer, and a pair of second semiconductor layers made principally of silicon containing phosphorus are formed on the first semiconductor layer. A pair of second electrically conductive layers are formed on the paired second semiconductor layers, respectively.

Thin-film transistor array with anodic oxide for use in a liquid crystal

A method of making thin film transistors such that the first conductive layer of a thin film transistor is formed with an aluminum system metal having a low electric resistance, and another metal capable of anodic oxidation is deposited to prevent the aluminum system metal from producing hillocks. The metal capable of anodic oxidation and part of the aluminum system metal are changed into an insulator by an anodic oxidation treatment. In all, the gate insulator of the thin film transistor comprises three layers of aluminum oxide, an oxide of the metal capable of anodic oxidation, and silicon nitride. The method makes it possible to form the lower-layer wiring and gate electrode having a low electric resistance and a flawless gate insulator having excellent insulative quality.

Method of making thin film transistors

A dielectric thin film element comprising a dielectric substrate and a dielectric thin film formed on the substrate. The thin film is made of a perovskite type oxide and formed by sputtering in an atmosphere containing nitrogen, by which the dielectric constant and the breakdown electric field strength are greatly improved. Thin film devices using the film and a method for making the thin film are also described.

Dielectric thin film, and method for making the thin film

In a thin film EL display device wherein a transparent electrode, a first dielectric layer, an EL emission layer, a second dielectric layer and a back electrode are laminated in order on a transluscent substrate, a 10 nm-200 nm thickness of thin film made of calcium sulfide or a mixture containing calcium sulfide which is formed by an electron beam vapor deposition method provided between the first dielectric layer and the EL emission layer and between the EL emission layer and the second dielectric layer, thereby obtaining a thin film EL display device which maintains a stable operation for a long period even when it is driven by A.C. pulses which are a symmetric with respect to the time relationship of the driving pulses (e.g., the time period between the start of a positive pulse and the start of the subsequent negative pulse is different than the time period between the start of a negative pulse and the start of the subsequent positive pulse) or are different in amplitude in a positive side and a negative side.

Thin film electroluminescence display device

An electroluminescent display panel formed of phosphor and dielectric layers sandwiched between opposing mutually intersecting arrays of drive electrodes, has the thickness of the phosphor layer set to a value which provides minimum power consumption, for a given level of display brightness. This is achieved by determining a value of capacitance per unit area of the panel which results in a maximum allowable value of time being required to charge each display element, then determining a value of phosphor layer thickness providing minimum power consumption, using the latter value of capacitance and the known value of light emission efficiency of the display.

Electroluminescence display panel configured for minimized power

An electroluminescent display device comprising an electroluminescent emitting layer including zinc oxide containing a luminescent active material, an insulating layer formed on one surface of the electroluminescent emitting layer and a pair of energizing means for applying signal voltages corresponding to an information to be displayed to a multilayer assembly including the said two layers, characterized in that a plurality of semiconductor layers each containing at least one chemical compound selected from the group consisting of chemical compounds of the II-VI groups and tin oxide are arranged as one of the energizing means arranged on the side of the electroluminescent emitting layer or between the energizing means arranged on the side of the electroluminescent emitting layer and the electroluminescent emitting layer. This device features that it requires only a reduced drive voltage for image displaying purposes and ensures an increased luminescent brightness.

Electroluminescent display device

Electroluminescence display device containing a zinc sulfide emission

New black color insulator thin films comprising Pr oxide, composite oxides of Pr-Mn, Pr-Ni, Pr-Co or Mn oxide are used to constitute at least one part or all parts of interface film between a phosphor film and a back electrode film of an AC thin film EL panel; and the panel with such a high contrast as 5:1 even at an illumination of 400 lux has been obtained.

Thin film EL panel

An electroluminescent element, especially a thin-film electroluminescent element in which the dielectric film layer provided on at least one side of an electroluminor layer is essentially composed of the materials represented by the following compositional formula:

Growing community of inventors

Neyagawa, Japan

Tomizo Matsuoka