Hitachi, Ltd.

Tomio Iizuka

Keiichi Kuniya

Hiroshi Sakamoto

Akira Misumi

Masateru Suwa

Toshio Doi

Hisashi Ando

Ko Soeno

Takeo Tamamura

Hideo Suzuki

Takanori Shibata

Takashi Namekawa

Hitoshi Suzuki

Kunio Miyazaki

Masahiro Koizumi

Jin Onuki

Tsutomu Omae

Izumi Ochiai

Hideo Arakawa

Sakae Kikuchi

Tomohiko Shida

Tomio Yasuda

Hiromichi Imahashi

Tetsuo Oyama

Takeshi Sasaki

Takaichi Koyama

Tomio Umino

Ryutarou Jimbou

Testuo Oyama

Keiziro Sakai

Akira Kawahara

Shigeo Turuoka

Shoji Isobe

A resin encapsulated semiconductor device comprises a semiconductor element, a conductive base, a wire of aluminum connecting the element and the base, and a thermosetting resin encapsulating hermetically the component to protect the device from a mechanical stress and ambient atmosphere.

Semiconductor device using annealed bonding wire

A method of production of a composite billet for a nuclear fuel cladding tube wherein a hollow inner billet of zirconium is inserted in a hollow outer billet of a nuclear fuel cladding material. Following insertion of a resilient member in the hollow inner billet, pressure is applied to the resilient member axially of the billets to force the inner billet against the outer billet, to produce a pressure bonding between an inner surface of the outer billet and an outer surface of the inner billet.

Method of production of composite billet for fuel cladding tube

A laser beam reflection system for applying a laser beam to an area to be treated. The laser beam reflection system has a hollow head housing, first reflecting mirror means disposed in the rotary head housing and adapted to deflect the laser beam introduced into the rotary head housing away from the axis, second reflecting mirror means disposed in the rotary head housing and adapted to reflect the laser beam coming from the first reflecting mirror means to such a direction as to traverse the axis, and third reflecting mirror means disposed in the head housing movably in the direction traversing the axis and adapted to reflect and focus onto the area the laser beam coming from the second reflecting mirror means. The laser beam reflection system of the invention can be used for welding, surface treatment, heat treatment, cutting of various materials, and a light source of laser communication systems.

Laser beam reflection system

A method for pressure bonding metal members by utilizing eutectic reaction comprising the steps of bringing two metal members of dissimilar metals to be bonded into contact with each other under a predetermined contacting pressure P.sub.1 lower than the plastic deformation pressures of the metals of the two members and heating the contacting surfaces of the two members to a temperature lower than melting point temperatures of the metals and not lower than the eutectic temperature thereof to produce a liquid of eutectic composition by eutectic reaction between the surfaces of the two members to be bonded, applying an upset pressure P.sub.2 higher than the contacting pressure P.sub.1 to the surfaces to be bonded to squeeze out the liquid from the contacting surfaces of the two members to outside, and cooling the bonded surfaces of the two members. When the members to be joined by pressure bonding are of the same metal, an insert comprising an element undergoing eutectic reaction with the metal of the two members is interposed between the surfaces of the two members to be bonded.

Method for pressure bonding metal members by utilizing eutectic reaction

Method for controlling an automatic pipe welder is disclosed. In the automatic welder which requires remote control, welding conditions for butt welding pipes are stored and an actual joint geometry or groove shape is sensed. From signals relating to the stored welding conditions and the sensed groove shape, a control command signal in actual welding is produced to effect welding under an optimum condition. On the other hand, an arc condition at an actual welding point and a melting condition of a metal are monitored and displayed to modify the welding conditions in accordance with the monitored condition to control the automatic pipe welder.

Method for controlling an automatic pipe welder

The present cathode for cathode ray tube of directly heating type is characterized by comprising a cathode substrate body having two leg pieces extended in the same direction and a flat part connected to one end of each leg piece, prepared by shaping a flat metal plate of nickel- or cobalt-based alloy, a bonding layer having an uneven surface prepared by diffusion bonding by heating a powder layer comprising powders of alloy or mixture of nickel and cobalt formed on the flat part, to which a thermionic emission layer is to be bonded, and the thermionic emission layer, and has a very small deformation when used and a longer life. A cathode with much less deformation and much longer life can be obtained by using a cathode substrate body prepared from a flat metal plate provided with a thinner metal layer of at least one of nickel and cobalt on its surface than the flat metal plate by diffusion bonding. A cathode with much less deformation after the service for a long period and much longer life is obtained by using a cathode substrate body prepared from a flat metal plate provided with a metal layer of at least one of nickel and cobalt having a smaller thickness on its surface than that of the flat metal plate by diffusion bonding, and then applying a plastic working to the flat metal plate to a desired thickness.

Cathode for cathode ray tube of directly heating type and process for

In a process for producing a cathode for a cathode ray tube of directly heating type, which comprises shaping a heat-resistant and electro-conductive, flat metal plate, into a cathode substrate body having two leg pieces extended in the same direction and a flat part connected to one end of each leg piece, forming a heat-diffusible metal powder layer having a good affinity to said flat metal plate and on an outer surface of said flat part, heating the powder layer, thereby diffusion bonding the powder layer to the flat part and forming a bonding layer having an uneven surface, to which a thermionic emission layer is to be bonded, and forming the thermionic emission layer on the surface of the bonding layer, the process is characterized by forming on said flat metal plate a metal layer having a good affinity to the flat metal plate, by diffusion bonding, thereby forming a compound plate, and shaping the resulting compound plate into the shape of said cathode substrate body. A cathode having less thermal deformation and a longer life can be produced thereby. Furthermore, the process is characterized by applying a plastic working to the compound plate to a desired thickness and shaping the resulting compound plate into the shape of the cathode substrate body, and a cathode having much less thermal deformation and much longer life can be produced thereby.

Process for producing cathode for cathode ray tube of directly heating

Copper powder, carbon fibers arranged in random directions and a metal capable of reacting with carbon fibers are homogeneously mixed together, and the mixture is heated and molded under high pressure to form an integral composite. The so formed carbon fiber-copper matrix composite has no directional characteristic in mechanical properties, and the linear thermal expansion coefficient of the composite is low and the thermal stability of the composite is so high that when it is exposed to high temperature, no damage by thermal deformation is caused.

Copper-carbon fiber composites and process for preparation thereof

A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed at least on one surface of the semiconductor substrate, in which the supporting electrode has such a composite structure that fibers having a coefficient of thermal expansion substantially equal to or lower than that of the semiconductor substrate are embedded in a matrix of a metal having electric and heat conductivities higher than those of the fibers. This supporting electrode has a satisfactorily high heat conductivity and the coefficient of thermal expansion thereof is freely adjustable.

Semiconductor device having supporting electrode composite structure of

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Ibaraki, Japan

Tomio Iizuka