Yazaki Corporation

Tomio Hirano

Kinya Horibe

Minoru Ikeda

Tatsuo Ikegaya

Takeshi Kamiya

Hisao Suzuki

Masaaki Tsukamoto

Tatsuo Nakazawa

Tatsuya Wada

Hideaki Murata

Antireflection coating on a substrate which is coated with a low refractive index layer having a specified refractive index which in turn is coated with a high refractive index layer having a higher refractive index than the low refractive index layer, is either characterized in that a roughened surface which scatters and reflects the incident light entered into the low refractive index layer in contact with the substrate is formed at the interface between the low refractive index layer and the substrate, or that a light-diffusing layer which scatters and reflects the incident light entered into the low refractive index layer in contact with the substrate is formed at the interface between the low refractive index layer and the substrate, or that a hard coating layer in contact with the low refractive index layer is formed by dispersing a light-diffusing material in the hard coating layer, which scatters and reflects the incident light entered into the low refractive index layer.

Antireflection coating

A process for forming a functional ceramic thin film eliminating the need of high temperature annealing which has been indispensable in the conventional process is provided. This can be achieved by the process for forming a functional ceramic thin film having a crystal of a composite oxide consisting of two or more metal elements and oxygen, which comprises steps of alternately stacking seeding layers having the same crystalline structure as said composite oxide and formable at a temperature lower than the crystallization temperature of the composite oxide, and layers containing a larger amount of a specified metal element than said seeding layers, and then annealing the resultant layers to form an integral body.

Process for forming thin films of functional ceramics

A process for producing a copper-indium-sulfur-selenium thin film which comprises subjecting an electro-conductive substrate to an electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide, and thiourea. A process for producing a chalcopyrite crystal which comprises subjecting an electro-conductive substrate to an electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide, and thiourea, and then conducting a heat treatment.

Process for producing copper-indium-sulfur-selenium thin film and

A novel palladium-nickel alloy plating solution provides a uniform electrodeposited film with excellent gloss at a high electric current density. A palladium-nickel alloy plating solution comprises a water-soluble palladium salt, a water-soluble nickel salt, ammonia, an ammonium salt, and 3-pyridinesulfonic acid, which are solved in water. Further additives may be added in the solution.

Palladium-nickel alloy plating solution

To remove pores and lattice defects in gold film plated on a substrate, the gold plating film is irradiated with a first laser beam to bring at least the surface of the film into almost melted condition, and then cooled in air. Further, it is preferable to anneal the melted gold surface by a second laser beam weaker than the first laser beam before air cooling, thus reducing the thickness of the gold film and therefore the material cost of electric contacts, for instance.

Method of treating gold plating film

In an electric contact having a Cu-based layer, a Ni-based layer formed on the Cu-based layer, and a Pd-based layer formed on the Ni-based layer, the Ni-based layer having a thickness of at least 0.8 .mu.m is so formed as to include a noncrystal nickel alloy layer having a thickness of at least 0.08 .mu.m, in order to reduce the thickness of the Pd-based layer down to about 0.08 .mu.m, that is, the cost of the contact without deteriorating the contact durability, as compared with a 0.6 to 2 .mu.m thick prior-art Pd-based layer.

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Shizuoka, Japan

Tomio Hirano