Renesas Technology Corp.

Other

Hitachi Communication Systems, Inc.

Hitachi, Ltd.

The Technology Partnership, Plc.

Hitachi Communications Systems, Inc.

Tomio Furuya

Nobuhiro Matsudaira

Satoshi Arai

Taizo Yamawaki

Masaru Kokubo

Kazuo Watanabe

Hiroyuki Nagai

Julian Hildersley

Masashi Maruyama

Tsuyoshi Shibuya

Kouichi Matsushita

Hirokazu Tsurumaki

Yasushi Ohyama

Hitoshi Sekiguchi

Takayuki Tsutsui

Toshihiko Shimizu

Yoshikuni Matsunaga

Fuminori Morisawa

Makoto Ishikawa

Koichi Matsushita

Tetsuaki Adachi

Hiroyuki Tanaka

Hitoshi Akamine

Kyoichi Takahashi

Takashi Soga

Yusuke Shimamune

Yoshiaki Harasawa

Kazuhiko Ishimoto

Shuji Tomono

Makoto Tabei

Hiroki Sugiyama

In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient &#x3bb; due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

High frequency power amplifier circuit and electronic component for high frequency power amplifier

The present invention is directed to compensate electric properties of an RF power module depending on changes with time, temperature dependency, variations, and the like of grounded emitter current amplification factor of an HBT. A compound semiconductor integrated circuit supplies reference current of a reference HBT depending on hFE of an HBT to an input terminal of a first current mirror of a bias circuit of a silicon semiconductor integrated circuit. The base of an output HBT of the compound semiconductor integrated circuit is biased with bias current which increases in response to decrease in hFE of the HBT from an output of the first current mirror of the silicon semiconductor integrated circuit.

Radio frequency power amplifying module with hetero junction bipolar transistor

A high frequency power amplifier circuit includes amplifying devices whose control terminals (gate or base terminals) are supplied with a bias voltage. The high frequency power amplifier circuit keeps constant the bias voltage so that the amplifying devices operate in a saturation region. The high frequency power amplifier circuit controls an operating power supply voltage supplied to the amplifying devices in accordance with an output request level to control output power. A device (diode) having temperature dependency is provided for an operating power supply voltage control circuit that controls the operating power supply voltage for the amplifying devices in accordance with the output request level. The operating power supply voltage control circuit is configured to generate the operating power supply voltage corresponding to the device's temperature characteristics and supply it to the amplifying devices.

High frequency power amplifier circuit

The present invention provides a high frequency power amplifier circuit capable of obtaining sufficient detection output even in a range where a request output power level is low and performing a desired output power control by a control loop with the detection output in a radio communication system which detects output power and performs feedback control. An output power detection circuit which detects the level of output power on the basis of an AC signal supplied from a final amplification stage of a high frequency power amplification circuit via a capacitive element has a circuit configuration such that in a state where the output power control voltage is lower than a certain level, current (Isu) according to the output power control voltage is generated and supplied to the output power detection circuit, and detection sensitivity of the output power detection circuit improves according to the current.

A communication apparatus includes a phase-locked loop circuit which receives a first signal having a frequency and converts it into an output signal having a transmission frequency and includes a current output type phase comparator which converts a phase difference between the first signal and a second signal into a current signal, a low pass filter which filters the current signal of the current output type phase comparator to produce an output signal a voltage controlled oscillator which produces an output signal having a transmission frequency corresponding to the output signal of the low pass filter the output signal of the voltage controlled oscillator constituting the output signal of the phase-locked loop circuit, a frequency converter which frequency-converts the output signal of the voltage controlled oscillator to produce the second signal, and a current source which supplies a current to an input of the low pass filter.

Phase-locked loop circuit and radio communication apparatus using the same

A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

High frequency power amplifier circuit device

The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

High frequency power amplifier and wireless communication module

A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.

A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Growing community of inventors

Tamamura, Japan

Tomio Furuya