Tokyo Electron Limited

Tomiko Kamada

Hiroto Ohtake

Eiji Suzuki

Akinori Kitamura

Masayuki Kohno

Yusuke Takino

Shota Yoshimura

Yuji Otsuka

Yutaka Osada

An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.

Plasma etching method

In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

Multilayer film etching method and plasma processing apparatus

A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain Si and N, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. Further, a power per unit area of the substrate, which generates the high frequency bias potential, is set to be about 0 W/mor more to about 400 W/mor less.

Plasma processing method

Growing community of inventors

Miyagi, Japan

Tomiko Kamada