Jsr Corporation

Tomikazu Ueno

Masayuki Motonari

Norihiko Ikeda

Hiroyuki Miyauchi

Takashi Matsuda

Eiichirou Kunitani

Masahiro Yamamoto

Taichi Matsumoto

Takahiro Iijima

Michiaki Andou

Yuugo Tai

A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein Rto Rindividually represent hydrocarbon groups, and Mrepresents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device

A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains having a pore volume of 0.14 ml/g or more, and (B) a dispersion medium.

Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion

A chemical mechanical polishing pad used for chemical mechanical polishing comprises a polishing surface, a non-polishing surface that is provided opposite to the polishing surface, a side surface that connects an outer edge of the polishing surface and an outer edge of the non-polishing surface, and a plurality of grooves formed in the polishing surface. The side surface has a slope surface that is connected to the polishing surface, and a depth of the grooves is equal to or smaller than a height of the slope surface.

Chemical mechanical polishing pad

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Yokkaichi, Japan

Tomikazu Ueno