Sumitomo Electric Industries, Limited

Read-rite Smi Corporation

Tomihito Miyazaki

Makoto Kiyama

Taku Horii

Keiji Wada

Toru Hiyoshi

Shin Harada

Taro Nishiguchi

Kyoko Okita

Takashi Sakurada

Makoto Sasaki

Shin Hashimoto

Tatsuya Tanabe

Kouhei Miura

Naoto Matono

Tatsuya Shiromoto

Takeyoshi Masuda

Hiromu Shiomi

Satomi Itoh

Chikayuki Okamoto

A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

Semiconductor device and method for manufacturing same

A recess is formed by partially etching a silicon carbide substrate. A mask layer is formed on the silicon carbide substrate by means of photolithography using the recess as an alignment mark. An impurity is implanted into the silicon carbide substrate using the mask layer. The silicon carbide substrate is annealed. After the annealing, a first electrode layer is deposited on the silicon carbide substrate. The first electrode layer is patterned by means of photolithography using the recess in the silicon carbide substrate as an alignment mark.

Method of manufacturing silicon carbide semiconductor device

A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening.

Method of manufacturing Schottky barrier diode

A method for manufacturing a Schottky barrier diode includes the following steps. First, a GaN substrate is prepared. A GaN layer is formed on the GaN substrate. A Schottky electrode including a first layer made of Ni or Ni alloy and in contact with the GaN layer is formed. The step of forming the Schottky electrode includes a step of forming a metal layer to serve as the Schottky electrode and a step of heat treating the metal layer. A region of the GaN layer in contact with the Schottky electrode has a dislocation density of 1&#xd7;10cmor less.

Schottky barrier diode and method for manufacturing schottky barrier diode

A semiconductor device includes a semiconductor layer () containing GaN and an electrode. The electrode includes an electrode main body (), a connection-use electrode () containing Al and formed at a position farther from the semiconductor layer () than the electrode main body (), and a barrier layer () formed between the electrode main body () and the connection-use electrode (), the barrier layer () containing at least one selected from the group consisting of W, TiW, WN, TiN, Ta, and TaN. A surface roughness RMS of the barrier layer () is 3.0 nm or less.

Method of producing semiconductor device

A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

Method of cleaning silicon carbide semiconductor

Semiconductor device and method of producing same

A Schottky barrier diode includes a GaN freestanding substrate having a front surface, a GaN epitaxial layer deposited on the front surface, and an insulation layer deposited on the GaN epitaxial layer at a front surface and having an opening. Furthermore, the Schottky barrier diode also includes an electrode. The electrode is configured by a Schottky electrode provided in the opening in contact with the GaN epitaxial layer, and a field plate electrode connected to the Schottky electrode and also overlapping the insulation layer. The GaN freestanding substrate has a dislocation density of at most 1&#xd7;10cm.

Schottky barrier diode

Schottky barrier diode and method for manufacturing Schottky barrier diode

Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor () is provided with a supporting substrate () composed of gallium nitride, a buffer layer () composed of a first gallium nitride semiconductor, a channel layer () composed of a second gallium nitride semiconductor, a semiconductor layer () composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (), a source electrode () and a drain electrode () for the transistor (). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration Nof the first gallium nitride semiconductor is 4&#xd7;10cmor more. The carbon concentration Nof the second gallium nitride semiconductor is less than 4&#xd7;10cm.

High electron mobility transistor, field-effect transistor, and epitaxial substrate

Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistoris provided with a supporting substratecomposed of gallium nitride, a buffer layercomposed of a first gallium nitride semiconductor, a channel layercomposed of a second gallium nitride semiconductor, a semiconductor layercomposed of a third gallium nitride semiconductor, and electrode structures (a gate electrode, a source electrodeand a drain electrode) for the transistor. The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration Nof the first gallium nitride semiconductor is 4&#xd7;10cmor more. The carbon concentration Nof the second gallium nitride semiconductor is less thancm.

Method of manufacturing group III Nitride Transistor

A method of manufacturing a thin film magnetic head includes forming a recording gap layer of a non-alumina base nonmagnetic material on a lower magnetic pole layer, the lower magnetic pole layer being composed of materials that are milled at the same rate. An upper magnetic pole layer is formed on the recording gap layer, and a single piece of equipment is used to trim the lower magnetic pole layer and pattern the recording magnetic gap layer such that the lower magnetic pole layer has a width that is substantially the same as that of the upper magnetic pole layer. The recording gap layer and the upper and lower half-gap layers are then removed over a region of the underlying substrate. Prescribed areas of tan air-bearing surface (ABS) are then etched to form a slider shape having a protruding part and a depressed part, the ABS and the side surface having a common edge such that the depressed part along the common edge extends into, but not beyond, the region.

Method of manufacturing a magnetic head device

Prevention of the formation of unwanted profiles in the ABS surface by etching of the slider ABS surface, even when gap layers are formed from non-alumina-base nonmagnetic materials differing from the component material of the substrate. Numerous thin film magnetic head elements, consisting of multiple layers including magnetic gap layers composed of nonmagnetic materials, are formed in a lattice array on the surface of a wafer. In the process of formation of these elements, the component materials of the magnetic gap layers existing in the region to be etched in order to form the slider shape are removed in advance. The wafer on the surface of which the elements are formed is cut into individual head blocks, and the surfaces opposing the magnetic recording media, consisting of a cut surface of said head block, are formed into a slider shape by etching.

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Osaka, Japan

Tomihito Miyazaki