Nokia Corporation

Corehw Semiconductor Oy

Nokia Mobile Phones Limited

Tomi-Pekka Takalo

Petri Heliö

Petri Kotilainen

Kalle Asikainen

Markus Hakamo

Tapio Kuiri

Ari Viljanen

A capacitor structure implemented as a layered structure including a plurality of alternating dielectric and metallization layers, and a method of manufacturing such capacitor structure. The capacitor structure including at least one lateral parallel plate capacitor part (LPP part) including two first electrodes on two different layers separated by dielectric material of a plurality of the alternating layers, and at least one vertical parallel plate capacitor part (VPP part) including two second electrodes each including a plurality of superimposed slabs or bars arranged on a plurality of the metallization layers. The at least one LPP part is electrically coupled with the at least one VPP part to form the capacitor structure. A variation in capacitance value of the at least one LPP part due to a variation of thickness of dielectric material is at least partially compensated by an opposite variation in capacitance value of the at least one VPP part.

Capacitor structure

A capacitor structure implemented using a semiconductor process. The capacitor structure includes a plurality of interdigitated positive and negative electrode fingers separated by a dielectric material, and a plurality of patterned metallization layers separated by the dielectric material. Each interdigitated electrode finger comprises a lateral part formed on one of at least two essentially parallel first metallization layers and a vertical part includes a plurality of superimposed slabs or bars disposed on a plurality of second metallization layers between said first metallization layers and electrically connected to each other and to the lateral part with a plurality of electrically conducting vias traversing through dielectric material separating adjacent metallization layers. Vertical distance between each pair of at least partially superimposed lateral parts of two adjacent electrode fingers is substantially equal to lateral distance between two adjacent vertical parts.

Capacitor structure and a chip antenna

The invention relates to a direct conversion receiver and a method in a direct conversion receiver for processing received radio signals that are modulated and centered at a carrier frequency, the modulation extending a sideband above and below the carrier frequency. The method comprises the steps of mixing a local oscillator frequency signal with said received radio signals for generating baseband frequency signals; filtering out generated disturbing direct current (DC) components of said baseband signals centered at the zero frequency; setting said local oscillator frequency signal equal to or about the carrier frequency plus an offset frequency, said offset frequency being equal to the difference between the carrier frequency and a null frequency, said null frequency centered at a notch of said sideband; and centering said notch at the zero frequency of said baseband signals through mixing. The invention relates particularly to suppression of DC offsets generated in the receivers.

Direct-conversion receiver system and method, especially a GPS receiver system with high pass filtering

The invention relates to a method for tuning a filter (). The filter has at least one variable time constant, by which the location of the pass band (pc) of said at least one filter can be changed. In the method, at least one reference signal is inputted in said filter (), and the frequency of said at least one reference signal is changed, and/or said at least one time constant of the filter () is changed. The method also comprises the steps of measuring the strength of the output signal of the filter () and determining, on the basis of the measurement on the strength of the output signal of the filter (), the location of the pass band of said filter ().

Method for tuning a filter

The invention relates to a method for forming at least two intermediate frequency signals with different phases in a mixer (), to which a first signal (RF) and a second signal (LO) are conducted. According to the method, the first intermediate frequency signal is formed by shifting the phase of the first signal (RF) and by mixing the phase-shifted first signal (RF) and the second signal (LO). The second intermediate frequency signal is formed by mixing the first signal (RF) and the second signal (LO). The phase shift of the first signal (RF) is performed in the mixer ().

Method for forming an intermediate frequency signal in a mixer, and a mixer

The invention relates to a method for implementing a transceiver, in which method radio-frequency signals are transmitted and received with a transceiver for communicating information. A radio-frequency signal received at a receiving stage is subjected to at least a first filtering step, in which a desired receiving signal is separated from the signal with a filter. A signal to be transmitted at a transmission stage is subjected to at least a second filtering step, in which a desired transmission signal is separated from the signal with a filter, to be transmitted. In the method, the same filter is used at least partly in said first and second filtering steps.

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Pirkkala, Finland

Tomi-Pekka Takalo