Motorola Corporation

Motorola Mobility LLC

Motorola Solutions, Inc.

Freescale Semiconductor,inc.

Tomasz L Klosowiak

Robert B Lempkowski

Zili Li

Min-Xian M Zhang

Daniel Roman Gamota

John Szczech

Ion V Nicolaescu

Lawrence E Lach

Donald J Zito

David W Currier

Jerzy Wielgus

Janice M Danvir

Keryn Lian

Jing Qi

Nick Hopman

Dmitriy Yavid

Sanjar Ghaem

George Thomas Valliath

Ke Keryn Lian

David J Anderson

Huinan J Yu

Aroon V Tungare

William L Olson

Manes Eliacin

Xiaodong Xun

Gary K Mui

Junhua Liu

William F Hoffman

Nadia Yala

Kin P Tsui

Prasanna Kulkarni

Mark Fulcher

A method for delineating a metallization pattern in a layer of sputtered aluminum or sputtered copper using a broad spectrum high intensity light source. The metal is deposited on a polymeric substrate by sputtering, so that it has a porous nanostructure. An opaque mask that is a positive representation of the desired metallization pattern is then situated over the metallization layer, exposing those portions of the metallization layer intended to be removed. The masked metallization layer is then exposed to a rapid burst of high intensity visible light from an arc source sufficient to cause complete removal of the exposed portions of the metallization layer, exposing the underlying substrate and creating the delineated pattern.

Method to pattern metallized substrates using a high intensity light source

A laser projector display module for a handheld device may include an electronics module, a miniaturized light source module electrically connected with the electronics module, a scanner module electrically connected with the electronics module, and an optical assembly configured to direct light from the light source onto the scanner module. The scanner module and the light source module may abut the electronics module.

Laser projector display modules and arrangements of components of laser projector display modules

A method and apparatus for forming controlled stress fractures in metal produces electrically isolated, closely spaced circuit sub-entities for use on a metallized printed wiring board. A polymeric substrate has a layer of metal adhered to the surface, and the metal layer is formed into entities. Each entity has a fracture initiating feature formed into it, which serves to initiate and/or direct a stress crack that is induced in the metal. The entities are fractured in a controlled manner by subjecting the substrate and the entities to mechanical stress by a rapid thermal excursion, creating a stress fracture in the entity extending from the fracture initiating feature. The stress fracture divides each entity into two or more sub-entities that are electrically isolated from each other by the stress fracture. The resulting structure can be used to form circuitry requiring very fine spaces for high density printed circuit boards. The rapid thermal stress may be induced by a high intensity, strobed xenon arc lamp.

Method and apparatus for providing electrically isolated closely spaced features on a printed circuit board

Disclosed are a system and method for microprojection that uses multiple imagers to produce a high resolution output image. Each of a set of imagers produces a portion of the final image. Relay lenses then tile the individual image portions together into a combined image. Because the height of the individual imagers is smaller than the height of a monolithic imager, they can fit into a very thin device. The combined image has a resolution equal to the sum of the resolutions of the individual imagers. The individual images are tiled together within the microprojector itself rather than on a projection screen. This allows the tiling to be adjusted once at the factory and set forever. In some embodiments, the light created for use by the microprojector is split by a polarizing beamsplitter. Each resultant polarized beam is then sent to an imager. Another polarizing beamsplitter combines the individual images.

Image projector with internally tiled intermediate images

A projector assembly includes a multi-pixel frame projector that sequentially projects each pixel making up a frame to a viewing surface, a movement detector coupled to the projector to detect a physical movement of the projector, and a movement compensator coupled to the projector, the movement compensator operable to transmit a correction signal to the projector, the correction signal capable of causing the projector to compensate for the detected movement.

Image stabilization in a laser-scanning based projector

Light from a plurality of light sources is combined in a beam combiner. Photo-sensors are used to sense the intensity of each light source. Signals from the photo-sensors may be used to control the intensity of the light sources. The photo-sensors can be located in the beam combiner or located in the fringe of a collimated beam produced by the beam combiner. The illumination system has application in laser-scanning micro-projectors, for example.

Illumination method and apparatus having a plurality of feedback control circuit for controlling intensities of multiple light sources

A method and apparatus for controlling light intensity from two or more light sources. A timing scheme is used to modulate the light sources. Light from the light sources is combined to form a beam and a photo-sensor senses the beam. In a time interval when only one of the light sources is activated, the signal from the photo-sensor is monitored and used in a feedback control circuit to control the active light source.

Method and apparatus for intensity control of multiple light sources using source timing

High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials

An optical communication between a first and second body portion connected by a rotatable member is established. A first optical fiber is attached to the first body portion and a second optical fiber is attached to the second body portion in a manner to allow the first and second optical fibers to be co-aligned with each other and with the rotatable member axis of rotation within the rotatable member. An optical signal emitted from a source on an input circuit board on the first body will transfer through the first optical fiber and be transmitted from the first fiber to the second optical fiber while concentrically aligned within the rotatable member, establishing optical communication between the source on the first body portion and a display device on the second body portion.

Optical communication device for rotary motion assemblies

A mesoscale micro electro-mechanical systems (MEMS) structure comprises an optical interface member () that moves with a pivoting member (). Such movement serves to occlude and/or to complete an optical signal pathway ().

Optical path method and apparatus

A mesoscale microelectromechanical system (MEMS) package for a micro-machine. The mesoscale micro-machine is formed on a printed circuit board () at the same time and of the same materials as the mesoscale micro-machine package. Both the micro-machine and the package have a first metal layer (), an insulating member () formed on the first metal layer, and a second metal layer () situated on the insulating layer. The package consists of a perimeter wall surrounding the micro-machine and a low-flow capping adhesive layer (). The first metal layers of both the micro-machine and the package are formed in the same process sequence, and the insulating layers of both the micro-machine and the package are formed in the same process sequence, and the second metal layers of both the micro-machine and the package are formed in the same process sequence. The low-flow capping adhesive secures an optional cover () on the package to provide an environmental seal.

Meso-microelectromechanical system package

The invention provides a method for attaching a flip chip to an electrical substrate such as a printed wiring board. A bumped flip chip is provided, the flip chip including an active surface and a plurality of connective bumps extending from the active surface, each connective bump including a side region. A thin layer of an underfill material is applied to the active surface of the flip chip and to a portion of the side regions of the connective bumps. The flip chip is positioned on the electrical substrate, the electrical substrate including a thick layer of a solder mask disposed on the electrical substrate. The flip chip is heated to electrically connect the flip chip to the electrical substrate, wherein the underfill material and the solder mask combine to form a stress-relief layer when the flip chip is electrically connected to the electrical substrate.

Flip-chip assembly with thin underfill and thick solder mask

A method for providing an underfill material on an integrated circuit chip at the wafer level. The wafer ( ) typically contains one or more integrated circuit chips ( ), and each integrated circuit chip typically has a plurality of solder bumps ( ) on its active surface. The wafer is first diced ( ) on the active surface side to form channels ( ) that will ultimately define the edges ( ) of each individual integrated circuit chip, the dicing being of such a depth that it only cuts part-way through the wafer. The front side ( ) of the wafer is then coated ( ) with an underfill material ( ). Generally, a portion ( ) of each solder bump remains uncoated, but in certain cases the bumps can be completely covered. The back side of the wafer is then lapped, ground, polished or otherwise treated ( ) so as to remove material down to the level of the previously diced channels. This reduction in the thickness of the wafer causes the original diced channels to now extend completely from the front side to the back side of the wafer. The wafer is then singulated ( ) by cutting the underfill material ( ) that was deposited in the channels during the coating step, so that the integrated circuit chip ( ) is released from the wafer, and the underfill material that was coated on the active side remains affixed to the active surface of each individual integrated circuit chip.

Wafer coating and singulation method

A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.

Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating

The invention relates, in general, to electrical connector assemblies, and more particularly to plastic electrical connectors that employ metal plated plastic contacts. According to an aspect of the invention, an electrical connector is provided comprising a plastic shell having an open cavity that defines an internal surface, and an electrical connector contact that comprises a metal coated area of the internal surface.

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Glenview, IL, United States of America

Tomasz L Klosowiak