Infineon Technologies Ag

Bayerische Motoren Werke Aktiengesellschaft

Zf Friedrichshafen Ag

Infineon Technologies Austria Ag

Tdk Electronics Ag

Tomas Manuel Reiter

Frank Wolter

Christoph Koch

Mark Nils Muenzer

Hartmut Proebstle

Dietmar Spitzer

Dieter Polenov

Dethard Peters

Marco Bachhuber

Michael Krug

Andre Uhlemann

Sandeep Walia

Sascha Axel Baier

Leo Aichriedler

Marcus Nuebling

Joachim Froeschl

Inpil Yoo

Gerald Wriessnegger

Waldemar Jakobi

Christopher Roemmelmayer

Karl Niklas

Michael Niendorf

Georg Schinner

Elvis Keli

Tom Roewe

Pawan Garg

Mathias Kiele-Dunsche

Christoph Wanke

Juergen Kett

Andreas Broesse

Peter Bayer

Andreas Schenk

Johannes Hackl

Volker Thorsten Schmidt

Sandra Zeljkovic

Marco Stallmeister

Bernhard Doemel

A power electronics system includes: a power semiconductor module with opposite first and second sides and lateral sides connecting the first and second sides. The power semiconductor module includes: at least one power semiconductor die forming at least one part of a half bridge circuit, an encapsulation encapsulating the power semiconductor die, and an external contact configured as a current contact of the half bridge circuit and exposed from the encapsulation at a lateral side of the power semiconductor module. A driver module arranged over the first side of the power semiconductor module is configured to control the half bridge circuit. A differential Hall sensor arranged over the external contact is configured to detect a current in the external contact. The driver module is configured to modify a control pattern of the half bridge circuit based on a current value detected by the differential Hall sensor.

Power electronics system having a differential hall sensor, method of fabricating the power electronics system, and method of operating a power semiconductor module of the power electronics system

A power electronics system includes: a power semiconductor module with opposite first and second sides and lateral sides connecting the first and second sides. The power semiconductor module includes: at least one power semiconductor die forming at least one part of a half bridge circuit, an encapsulation encapsulating the power semiconductor die, and an external contact configured as a direct current contact of the half bridge circuit and exposed from the encapsulation at a lateral side of the power semiconductor module. A driver module arranged over the first side of the power semiconductor module is configured to control the half bridge circuit. A differential Hall sensor arranged over the external contact is configured to detect a direct current flowing through the external contact. The driver module is configured to modify a control pattern of the half bridge circuit based on a direct current value detected by the differential Hall sensor.

Power electronics system, method for fabricating a power electronics system and method for protecting a half bridge circuit from an overload or overcurrent

A semiconductor die includes: a SiC substrate; power and current sense transistors integrated in the substrate such that the current sense transistor mirrors current flow in the main power transistor; a gate terminal electrically connected to gate electrodes of both transistors; a drain terminal electrically connected to a drain region in the substrate and which is common to both transistors; a source terminal electrically connected to source regions of the power transistor; a dual mode sense terminal; and a doped resistor region in the substrate between the transistors. The dual mode sense terminal is electrically connected to source regions of the current sense transistor. The doped resistor region has an opposite conductivity type as the source regions of both transistors and is configured as a temperature sense resistor that electrically connects the source terminal to the dual mode sense terminal.

Dual mode current and temperature sensing for SiC devices

A power semiconductor module includes: an electrically insulative frame having opposite first and second mounting sides, and a border that defines a periphery of the electrically insulative frame; a first substrate seated in the electrically insulative frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a plurality of busbars attached to the first substrate and extending through the border of the electrically insulative frame; a plurality of fixing positions at the first mounting side of the electrically insulative frame; and a plurality of electrically insulative protrusions jutting out from the second mounting side of the electrically insulative frame, wherein the protrusions are vertically aligned with the fixing positions. Methods of producing the power semiconductor module and power electronic assemblies that incorporate the power semiconductor module are also described.

Power semiconductor module having protrusions as fixing structures

A power electronics module includes at least one first substrate having on a first side one or more first semiconductor dies, the one or more first semiconductor dies and the at least one first substrate providing a higher power part of the power electronics module, at least one second substrate having on a first side one or more second semiconductor dies, the one or more second semiconductor dies and the at least one second substrate providing a lower power part of the power electronics module, and a common frame at least partially encasing the first and second substrates and being a monobloc part, the higher power part being configured for direct liquid cooling and the lower power part being configured for indirect cooling.

Power electronics module and method for fabricating a power electronics module

A power semiconductor module arrangement includes a power electronics substrate comprising a first DC voltage pad, a second DC voltage pad, a first load pad, and a second load pad, first and second transistor dies mounted on the first load pad, third and fourth transistor dies mounted the first DC voltage pad, the first and second transistor dies collectively form a first switch, the third and fourth transistor dies collectively form a second switch, the first and second DC voltage pads are arranged such that a DC supply impedance for a first commutation loop that flows through the first and third transistor dies matches a DC supply impedance for a second commutation loop that flows through the second and fourth transistor dies, and an impedance of a first load connection to the third transistor die is greater than an impedance of a second load connection to the fourth transistor die.

Power module layout for symmetric switching and temperature sensing

Overload detection and protection for power switch circuits. For circuits with faster switching speed, fast fault detection and response to a detected overload condition may be desirable. Detection circuitry may monitor a voltage on the control terminal of one or more power switches. Based on empirical measurements, in an overload condition of a power switch circuit, e.g., a half-bridge circuit, the voltage at the control terminal may increase, and in some examples, increase to a magnitude that is greater than a supply voltage. A comparator may detect a voltage increase that exceeds a voltage magnitude threshold, output an indication to control circuitry for the power switch circuit, and the control circuitry may take action to protect the rest of the circuitry, such as reduce voltage or shut off the power switch circuit.

Diagnosis of gate voltage to detect high current

A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptacle in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptacle and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptacle. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

Power semiconductor module with current sensor rotation bar

This disclosure describes circuits and techniques for identifying potential problems with control signals for power switches. More specifically, this disclosure describes the use of registers, e.g., volatile or non-volatile storage elements, configured to count the rising and/or falling edges of pulse modulation (PM) signals within driver circuits or other control circuits. By counting the edges of PM signals within driver circuits, signaling problems can be identified based on mismatch between different counters. The techniques may be used by a driver circuit to detect circuit problems, or readout of the registers can be done after device failure, in order to help identify whether signaling problems may have caused the device failure.

Pulse counting registers for monitoring control signals of power switches

A semiconductor die includes: a SiC substrate; power and current sense transistors integrated in the substrate such that the current sense transistor mirrors current flow in the main power transistor; a gate terminal electrically connected to gate electrodes of both transistors; a drain terminal electrically connected to a drain region in the substrate and which is common to both transistors; a source terminal electrically connected to source and body regions of the power transistor; a dual mode sense terminal; and a doped resistor region in the substrate between the transistors. The dual mode sense terminal is electrically connected to source and body regions of the current sense transistor. The doped resistor region has a same conductivity type as the body regions of both transistors and is configured as a temperature sense resistor that electrically connects the source terminal to the dual mode sense terminal.

SiC device having a dual mode sense terminal, electronic systems for current and temperature sensing, and methods of current and temperature sensing

A circuit board includes: an electrically insulating part and an electrically conductive part; at least one semiconductor chip embedded into the electrically insulating part in a part of the circuit board; and a cooling area above and below the at least one semiconductor chip. The electrically conductive part includes a first outer conductive layer on the first surface, a second outer conductive layer on the second surface, and a first inner conductive layer which is electrically connected to the semiconductor chip. The first inner conductive layer is electrically insulated from the first outer conductive layer and from the second outer conductive layer by the electrically insulating part in the cooling area, or is electrically connected to the first outer conductive layer outside the cooling area.

Circuit board having a cooling area above and below a semiconductor chip

Described is a power semiconductor module that includes: a frame made of an electrically insulative material; a first substrate seated in the frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar extending from the first substrate through a side face of the frame; a current sensor module seated in a receptacle of the frame in sensing proximity of the busbar, the current sensor module including a current sensor attached to a circuit board; and a potting material fixing the current sensor module to the frame such that no air gap is present between the current sensor and the busbar. The potting material contacts the frame and the current sensor. Methods of producing the power semiconductor module are also described.

Power semiconductor module having a current sensor module fixed with potting material

An integrated circuit comprises a power switch comprising a current path and a current sense node; and a temperature sense circuit internally coupled between the current path and the current sense node.

Power switch with an integrated temperature and current sense circuit

A method may include pressing a sensor module onto a control board such that the sensor module is at an initial position where an air gap is present between a module body of the sensor module and the control board such that compliant pins of the sensor module are partially inserted into the control board. The method may include mounting the control board on a power module to cause pins of the power module to be at least partially inserted into the control board and the sensor module to be at least partially inserted in the power module such that a protrusion is through an opening in a busbar. The method may include pressing the control board onto the power module to cause the pins of the power module to be further inserted into the control board, the sensor module to be further inserted in the power module, and the sensor module to be at a final position.

Add-on current sensor for a power module

A semiconductor power module includes an electrically conductive carrier plate, a power semiconductor chip arranged on the carrier plate and electrically connected to the carrier plate, and a contact pin electrically connected to the carrier plate and forming an outer contact of the semiconductor power module. The contact pin is arranged above a soldering point. The soldering point is configured to mechanically directly or indirectly fix the contact pin on the carrier plate and to electrically connect the contact pin to the carrier plate. The contact pin is electrically connected to the carrier plate via a further connection. The further connection has a portion which is mechanically flexible in relation to the carrier plate.

Growing community of inventors

Munich, Germany

Tomas Manuel Reiter