Forschungsverbund Berlin E.v.

Alcan Technology & Management Ltd.

Tomas Krämer

Roman Fuchs

Volkmar Gillich

According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discrete, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.

Semiconductor device with heat removal structure and related production method

A weather and corrosion-resistant reflector with high overall reflection in the visible and infrared wavelength ranges. The reflector contains a reflector body with a reflection surface of an aluminum or aluminum alloy or a reflector body with a reflection coating of an aluminum or aluminum alloy. The reflector also contains an outer, final transparent protective layer of a sol-gel coating which is thicker than 1 &#x3bc;m. The transparent sol-gel coating is a polymer of cross-linked inorganic siloxanes with alcohol groups that are bonded to the silicon with a carbon bond. The sol-gel coating is produced in a sol-gel process and, after having been applied to the reflector body, is dried and hardened using heat. The protective layer has excellent resistance to weather, corrosion and abrasion.

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Berlin, Germany

Tomas Krämer