Novaled Gmbh

Tomas Kalisz

Carsten Rothe

Ansgar Werner

Jan Birnstock

Benjamin Schulze

Omrane Fadhel

Francois Cardinali

Steffen Willmann

Jerome Ganier

Vygintas Jankus

Uwe Gölfert

Volodymyr Senkovskyy

Markus Hummert

Thomas Rosenow

Ulrich Denker

Tobias Canzler

Mike Zöllner

Jens Angermann

Kai Gilge

Urlich Denker

The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.

Organic electronic device comprising an inverse coordination complex and a method for preparing the same

Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100&#xb0; C. and 600&#xb0; C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

Process for making a metal containing layer

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

N-doped semiconducting material comprising two metal dopants

The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

N-doped semiconducting material comprising polar matrix and metal dopant

The present invention relates to a metallic layer adjacent to a semiconducting layer comprising a substantially covalent matrix material, the metallic layer comprising at least one first metal and at least one second metal, wherein a) the first metal is selected from the group consisting of Li, Na, K, Rb, Cs; and b) the second metal is selected from the group consisting of Zn, Hg, Cd, Te, electronic devices comprising such materials and process for preparing the same.

Metallic layer comprising alkali metal and second metal

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Dresden, Germany

Tomas Kalisz