Hitachi, Ltd.

Centre National De La Recherche Scientifique

Université Paris Sud Xi

University of Nottingham

Université Paris—sud

Institute of Physics Ascr V. V. I.

Tomas Jungwirth

Joerg Wunderlich

Bryan Gallagher

Andrew Irvine

David Arfon Williams

Claude Chappert

Thibaut Devolder

Jan Zemen

Andrew Ferguson

Jörg Wunderlich

Frantisek Maca

Alexander Shick

Byong Guk Park

Jairo Sinova

Brian Gallagher

Fernando Gonzalez Zalba

Chiara Ciccarelli

Xavier Marti

Rubén Otxoa

Joao Godinho

Jakub Zelezny

Peter Wadley

Kevin Edmonds

Tomas Janda

Pierre Roy

David Williams

Richard Campion

A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarized charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Spin-polarised charge-carrier device

A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Method of controlling a magnetoresistive device using an electric field pulse

A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

Magnetoresistive device

A single-electron transistor () has an elongate conductive channel () and a side gate () formed in a 5 nm-thick layer () of GaMnAs. The single-electron transistor () is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.

Single-charge tunnelling device

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Praha, Czechia

Tomas Jungwirth