Rohm Co., Ltd.

Toma Fujita

Goro Nakatani

Haruhiko Nishikage

Hironobu Kawauchi

Masahiro Sakuragi

Mizuho Okada

A pressure sensorcomprises a semiconductor substrate, insulating layersformed on the semiconductor substrate, a semiconductor layerformed on the semiconductor substratewith the insulating layersintervening therebetween, and a cavity portionprovided between the semiconductor substrateand the semiconductor layer. The portion of the semiconductor layerwhich overlaps the cavity portionas viewed in a lamination direction serves as a movable portion. The cavity portionis surrounded by the insulating layers. With this arrangement, the pressure sensorcan be manufactured easily with high precision.

Pressure sensor and method for manufacturing pressure sensor

A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

Method for manufacturing a MEMS sensor

Capacitance type sensor

[Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensorincludes a silicon substrateprovided therein with a reference pressure chamber, a diaphragm, consisting of part of the silicon substrate, formed on a surface layer portion of the silicon substrateto partition a reference pressure chamber, and an etching stop layerformed on a lower surface of the diaphragmfacing the reference pressure chamber. A through-holecommunicating with the reference pressure chamberis formed on the diaphragm, and a filleris arranged in the through-hole

MEMS sensor and method for producing MEMS sensor, and MEMS package

To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same. The semiconductor device includes: a semiconductor substrate with a recess portion formed in an upper surface; a supporting body provided around the recess portion on the semiconductor substrate; a beam-type movable portion which includes a movable electrode provided above the recess portion and is fixed to the supporting body at a position away from the movable electrode; a beam-type fixed electrode provided above the recess portion to be opposed to the movable electrode and fixed to the supporting body; and isolation regions each including a separation column made of a semiconductor and a separation insulating film provided on a side surface of the separation column, the isolation regions being provided between the movable electrode and the supporting body and between the fixed electrode and the supporting body to electrically separate the movable and fixed electrodes from the supporting body.

Semiconductor device and method of fabricating the semiconductor device

There are disclosed a semiconductor device in which a short circuit between an oscillator and a semiconductor substrate is prevented, the semiconductor device being capable of suppressing an increase of fabrication steps, and a method of fabricating the semiconductor device. The semiconductor device includes: a semiconductor substrate, in which a recessed portion is formed on an upper surface, and a semiconductor layer is exposed to a bottom surface of the recessed portion; an oscillator that has a beam-type movable electrode arranged in the recessed portion, the movable electrode having insulating films arranged on side surfaces and lower surface thereof, and is fixed to the semiconductor substrate at a position apart from the movable electrode; and a beam-type fixed electrode that is arranged in the recessed portion so as to be opposed to the movable electrode, and is fixed to the semiconductor substrate so as to be electrically isolated from the movable electrode.

Growing community of inventors

Kyoto, Japan

Toma Fujita