U.S. Philips Corporation

Asml Netherlands B.v.

Koninklijke Philips Corporation N.v.

Tom Van Zutphen

Frederik C Gehring

Ron Kroon

Erwin A Hijzen

Erik Roelof Loopstra

Martinus Cornelis Reijnen

Patrick David Vogelsang

Engelbertus Antonius Fransiscus Van Der Pasch

Frits Van Der Meulen

Gerardus Hubertus Petrus Maria Swinkels

Emiel Jozef Melanie Eussen

Ruud Antonius Catharina Maria Beerens

Dzmitry Labetski

Stoyan Nihtianov

Marcel Koenraad Marie Baggen

Frank Auer

Jacobus Stoffels

Mark A De Samber

Jacob Willem Vink

Remko Wakker

Albert Manenschijn

Juraj Makarovic

Stefan Gertrud Marie Hendriks

Lodewijk Alexander Schijvenaars

Rody Koops

Olaf Hubertus Wilhelmus Van Bruggen

Johannes Roland Dassel

A positioning device includes a planar motor having a stator and a translator, one of the stator and the translator including a periodic magnet structure and another of the stator and the translator including at least one coil that is adapted to carry an electric current, wherein the coil includes a wound strip of sheet-like electrically conductive material, and wherein an edge of the coil is provided with a rounded profile.

Coil, positioning device, actuator, and lithographic apparatus

A sensor includes a semiconductor body having a top and bottom surface, a first doped surface oriented region of a first conductivity type at the top surface, and a second doped surface oriented region of a second and opposite conductivity type at the bottom surface, wherein a sensitive area is defined where the first region overlaps with the second region. A resistive layer is partially arranged in the sensitive area. The sensor includes two first electrode contacts and two second electrode contacts, wherein the first electrode contacts are placed on the resistive layer to define a first detection area in the sensitive area between the first electrode contacts, and wherein the second electrode contacts are placed partially in the sensitive area on the bottom surface of the body, the surfaces of the second electrodes in the sensitive area defining a second detection area that overlaps with the first detection area.

Optical position sensor, a position sensitive detector, a lithographic apparatus and a method for determining an absolute position of a movable object to be used in a relative position measurement system

A plasma radiation source includes a vessel configured to catch a source material transmitted along a trajectory, and a decelerator configured to reduce a speed of the source material in a section of the trajectory downstream of a plasma initiation site.

Radiation source, lithographic apparatus, and device manufacturing method

A method for calibrating an auxiliary sensor system is provided. The auxiliary sensor system measures a position of a grating relative to a reference, the grating forming part of an encoder measurement system. The encoder measurement system is adapted to measure a position of a substrate table of a lithographic apparatus and further comprises a sensor mounted to the substrate table. The method comprises exciting the grating to make a movement in at least one measurement direction of the auxiliary sensor system, obtaining an auxiliary sensor system output signal from the sensor system during the movement, and adjusting a parameter of the auxiliary sensor system based on the output signal obtained during the movement to thereby calibrate the auxiliary sensor system.

Lithographic apparatus and sensor calibration method

A lithographic apparatus having a stationary magnet motor to drive a support such as a substrate support or a patterning device support, may be provided with a measurement system to measure a position of the support in question, e.g., to provide a safety system to prevent a collision of the support with another part. The measurement system may be configured to measure a magnetic field strength of an alternating magnetic field generated by the magnet assembly of the stationary magnet motor, and/or measure generation of eddy currents in a metallic layer shielding the magnet assembly in combination with an inductance measurement of an electromagnet generating the alternating magnetic field causing the eddy currents, and/or measure light using an optical position sensitive sensor such as a CCD metric or linear photodiode positioned in a light plane emitted by an emitter.

Lithographic apparatus and position sensor

An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surface of the cathode, which source is capable of evolving, at the increased temperatures occurring during evacuation of the tube in the manufacturing process, a reducing agent such as F or HF, which passivates the free (Si) surface of the cathode.

Electron tube comprising a semiconductor cathode

A picture display device having a cathode which includes two electric current conductors between which a video signal is applied, for applying a video signal to the cathode to modulate an electron beam emitted from the cathode. To increase the feasible modulation frequency, the inductance of the two electric conductors is reduced by holding one part of the length of the conductors closer together than their spacing over another part of the same length.

Picture display device having an improved bandwidth

Cathode ray tube comprising an electron gun which is constructed in such a way that the gas pressure near the electron-emissive layer (,) of the cathode is lower than in the other parts of the tube. This can be achieved by reducing the aperture between the G,(,) and G,(,), by providing the G,(,) with a skirt (,). The wall of the skirt, the G,and the G,may also be at least partly coated with a getter (,).

Cathode ray tube with a getter coating in the vicinity of a semiconductor cathode

In an electron tube based on a cold cathode, a cesium source (,) containing Cs,&mdash;Au,or Cs,&mdash;Sb,is provided near the cold cathode (,), preferably in contact with the first grid (,). Cesium is introduced into the source during activation of the tube. The vapor pressure of the cesium compounds is such that proper delivery of cesium is guaranteed throughout the life-time of the cathode.

Electron tube with a cesium source

A semiconductor cathode (,) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (,) with a layer of a semiconductor material (,) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-mission efficiency are indicated.

Electron tube having a semiconductor cathode with lower and higher bandgap layers

Semiconductor device with a semiconductor cathode having an emissive part (pn junction) separated from a contact part which has locations at which a controlled breakdown occurs on a contact part metallization at excessive voltages, so that, during manufacture and operation, the emissive part in an election tube is protected from damage.

Semiconductor cathode and electron tube comprising a semiconductor

A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-emission efficiency are indicated.

Electron tube having a semiconductor cathode with lower and higher

Electron-optical device having two elongate emitting regions arranged symmetrically with respect to a longitudinal axis for producing two electron beams having an elongate cross-section. By means of electron grids, the two beams are focused at the same point of an electron target arranged transversely to the longitudinal axis and having a short central axis and a long central axis. The elongate emitting regions have their smallest cross-section parallel to the scanning direction of a device, cooperating with the electron-optical device, for scanning a target arranged transversely to the longitudinal axis.

Electron-optical device having separate elongate electron-emitting

By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).

An electron has an electron-emitting region, a longitudinal axis and an arrangement of apertured electron grids along the axis. A first grid has an aperture for passing electrons, which aperture is located further outwards with respect to the longitudinal axis than the emitting region. One of the other grids is provided with a shield so as to shield the edge wall of the aperture, if it is located within direct view of the electron-emitting region, from incidence of positive ions.

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Eindhoven, Netherlands

Tom Van Zutphen