Advanced Micro Devices Corporation

Tom Tse

Elfido Coss, Jr

Richard J Markle

Zhiyong Zhao

Patrick M Cowan

David Hendrix

The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.

Fault detection and control methodologies for ion implantation processes, and system for performing same

A method is presented for compensating for the effects of charge neutralization in calculating the 'true' ion dose, i.e., the dose assuming no changes of charge state of ions during an implantation process. An ion beam is generated under normal operating conditions, e.g., stable vacuum exists, and no target is being implanted. At least one additional detector would be positioned in the target chamber, and a dose measurement conducted simultaneously with a measurement of the beam current with the Faraday, which is located outside of the charge neutralization region, to establish a reference ratio. A wafer is then placed at the target location, and simultaneous measurements made with the additional detector and Faraday, as before, to determine the ratio between the beam current and the detector during wafer implantation. Any drift from the reference ratio indicates the dose error due to charge neutralization from wafer outgassing during implantation. Software for controlling various parameters could be configured to use the ratio drift data to change the dose counter to compensate for the dose error due to charge neutralization.

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Austin, TX, United States of America

Tom Tse