Oy Ajat Limited

Finphys Oy

Rakkatec Oy

Tom Schulman

Konstantinos E Spartiotis

Tuomas Pantsar

Risto O Orava

Petteri Mehtala

Anssi Leppanen

Risto Orava

A device for detecting neutrons includes at least one common module, where a number of solid state sensors are assembled. The sensors are configured in the module side by side and/or stacked in a layered structure. At least one of the sensors includes neutron reactive material as a neutron converter for interacting with neutrons incident thereon to be detected and to release ionizing radiation reaction products responsive to interactions with the incident neutrons. The neutron converters are coupled with corresponding semiconductor elements so that the semiconductor elements interact with the ionizing radiation reaction products for providing electrical charges in proportion to the energy of the ionizing radiation reaction products. The semiconductor elements are configured with electrodes for providing charge collection areas for collecting the electrical charges and to provide electrically readable signals proportional to the collected electrical charges.

Neutron detector

A radiation imaging device includes plural individual detectors defining an irregular rectangular active area responsive to x-rays and with different widths along a length of the active area. The individual detectors may be of different rectangular shapes and mounted on a motherboard. The motherboard may be formed of a first module mounting a first of two individual detectors and a second module detachable connected to the first module and mounting a second of two individual detectors.

Radiation imaging device with irregular rectangular shape and extraoral dental imaging system therefrom

A detector for detecting neutrons includes a neutron reactive material interacting with neutrons to be detected and releasing ionizing radiation reaction products in relation to the interactions. It also includes a first semiconductor element being coupled with the neutron reactive material and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element for providing charge collecting areas for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges. In the detector the neutron reactive material is arranged so that the incident neutrons to be detected interact with the neutron reactive material essentially in the portion nearest to the charge collecting areas provided by the electrodes in the first semiconductor element to which the neutron reactive material is coupled with.

Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus

A detector () for detecting neutrons includes a neutron reactive material () adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to the interactions with neutrons. The detector also includes a first semiconductor element () being coupled with the neutron reactive material () and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element () for providing charge collecting areas () for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges. The thickness of the first semiconductor element () is adapted to be electrically and/or physically so thin that it is essentially/practically transparent for incident photons, such as background gamma photons.

Ultra thin neutron detector, method for manufacturing the neutron detector and neutron imaging apparatus

A CdTe or CdZnTe radiation imaging detector and high voltage bias part for applying a high voltage to the continuous electrode to ensure stable performance of the detector. The high voltage bias part includes conductors of &#x3e;30 um diameter and preferably selected from a group of materials that do not oxidize easily or oxidize less than aluminium.

CdTe/CdZnTe radiation imaging detector and high/biasing voltage means

A radiation device includes a detector connected to a multi-functional radiation identifying and processing application specific integrated circuit. The detector includes a plurality of individual imaging cells, each imaging cell generating a charge in response to incident radiation events and outputting the generated charge at an imaging cell output. The application specific integrated circuit includes a different circuit connected respectively to a corresponding one of the imaging cell outputs, each circuit receiving and processing the generated charge received from the corresponding one imaging cell output. Each circuit includes a preamplifier for generating a voltage or current amplitude in response to the received charge, a counter, and a mode logic configured for setting the counter to perform, selectively, at least two of a) photon counting, b) analog to digital conversion of the one of the voltage amplitude and the current amplitude, and c) timing measurement of incident radiation events.

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Porvoo, Finland

Tom Schulman