Analog Devices,inc.

Tom Pilling

Javier Alejandro Salcedo

Srivatsan Parthasarathy

Yuanzhong Zhou

Jean-Jacques Hajjar

Low capacitance silicon controlled rectifier (SCR) topologies for overvoltage protection are disclosed herein. In certain embodiments, an overvoltage protection circuit is connected between an RF signal pad and a ground signal pad. The overvoltage protection circuit includes a fin field-effect transistor (FinFET) SCR including a PNP bipolar transistor and an NPN bipolar transistor that are cross-coupled, a FinFET trigger circuit connected between an emitter of the PNP bipolar transistor and a base of the NPN bipolar transistor, and a linearity enhancement impedance connected between a reference voltage terminal and the emitter of the PNP bipolar transistor. In certain implementations, a FinFET diode is further included in series with the FinFET SCR with a cathode of the FinFET diode connected to the emitter of the PNP bipolar transistor.

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San Diego, CA, United States of America

Tom Pilling