Asml Masktools Netherlands B.v.

Tom Laidig

Kurt E Wampler

J Fung Chen

Roger F Caldwell

A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of &ldquo;imaging elements.&rdquo; The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form &ldquo;halftone-like&rdquo; imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.

Method of patterning sub-0.25&lgr; line features with high transmission, &ldquo;attenuated&rdquo; phase shift masks

Method of patterning sub-0.25 lambda line features with high transmission, &ldquo;attenuated&rdquo; phase shift masks

A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.

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Point Richmond, CA, United States of America

Tom Laidig