Dunan Sensing LLC

Meggitt (orange County), Inc.

Meggitt (san Juan Capistrano), Inc.

Zhejiang Dunan Artificial Environment Co., Ltd.

Endeoco Corporation

Aip Networks, Inc.

Meggit (orange County), Inc.

Meggitt Ltd.

Tom Kwa

Leslie Bruce Wilner

Emir Vukotic

Gary Winzeler

Danny Do

J Andrew Yeh

Robertus Petrus Van Kampen

Don L Danielson

Linh Le

Nina Tikhomirova

Methods of manufacturing a pressure sensor from an SOI wafer are provided. In preferred embodiments, the methods comprise forming a cavity in a SOI wafer by removing a first portion of a bottom silicon layer on the bottom side of the SOI wafer to a depth of an insulator layer; depositing a layer of a second material over the cavity; removing both the silicon layer and the insulator layer from a top side of the SOI wafer in a first plurality of areas above the cavity to form a diaphragm from the layer of a second material, wherein at least one support structure that spans the diaphragm is formed from material above the cavity that was not removed; and forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.

Methods for fabricating pressure sensors with non-silicon diaphragms

Methods of manufacturing a pressure sensor are provided. In preferred embodiments, the method comprises: forming a cavity in a first side of a silicon starting material; depositing a layer of a second material over the cavity; removing a first portion of material above the cavity from a second side of the silicon starting material to expose the second material to the second side to form a diaphragm from the second material and wherein, a second portion of material above the cavity that was not removed from the silicon starting material, forms at least one support structure that spans the diaphragm, wherein the second side is opposite to the first side; and forming at least one piezoresistor in the silicon starting material over an intersection of the support structure and the silicon starting material at an outside edge of the diaphragm on the second side.

Systems and methods for packaging a MEMS device to measure the in-stream pressure within a pipe are provided. Embodiments herein avoid the use of a metal housing enclosing the MEMS device or die pad of the MEMS device. Instead, the MEMS device is mounted directly to the pipe using a ceramic carrier. In preferred embodiments, the ceramic carrier is soldered, brazed, welded or eutectic bonded to the metal pipe.

Methods for mounting a MEMS sensor for in-stream measurements

A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

Pressure sensor with support structure for non-silicon diaphragm

A MEMS acceleration sensor comprising: a frame, a plurality of proofmasses; a plurality of flexures; a plurality of hinges and a plurality of gauges. The frame, proofmasses, flexures, hinges and gauges designed to measure acceleration in a direction perpendicular to the device plane while being generally resistant to motions parallel to the device plane. The measurement of the acceleration is accomplished through the piezoresistive effect of the strain in the gauges.

MEMS accelerometer

A MEMS acceleration sensor is provided. In one embodiment, the MEMS acceleration sensor comprises: a frame; a first proofmass located within the frame, the first proofmass including a left side, right side, top, and bottom; an axis running from the left side to the right side at about a median point between the top and bottom; a first flexure running along the axis and coupling the left side to the frame; a second flexure running along the axis and coupling the right side to the frame; a first channel that extends from the bottom up past the axis to a first channel end; a second channel that extends from the top down past the axis to a second channel end; a second proofmass located within the first channel and coupled to the first proofmass via a first hinge and a first gauge at the first channel end and coupled to the frame at the bottom via a second hinge and a second gauge; and a third proofmass located within the second channel and coupled to the first proofmass via a third hinge and a third gauge at the second channel end and coupled to the frame at the top via a fourth hinge and a fourth gauge.

High-output MEMS accelerometer

A pressure sensitive element is provided. In one embodiment the pressure sensitive element comprises: a diaphragm with a gage side and a back side and a rim surrounding the diaphragm; a pair of inner islands on the gage side of the diaphragm wherein the pair of inner islands are spaced to form a first gap between the pair of inner islands; a first freed gage spanning the first gap; at least one bridge to provide an electrical communication path between the rim and the first freed gage; an outer island on the gage side of the diaphragm wherein the outer island and the rim are spaced to form a second gap; and a second freed gage spanning the second gap.

Microelectromechanical pressure sensors

A pressure sensor assembly comprising: three stacked silicon wafers which form a support, a sensor and a cover wherein the sensor includes a cavity extending from the bottom of the sensor up towards the top of the sensor to form a cavity bottom and a diaphragm; a dielectric layer covering the bottom of the sensor and the cavity and wherein the support is coupled to the dielectric layer along the bottom of the sensor; a plurality of ports located on a top of the support within an area defined by the cavity, the plurality of ports extending through the support to its bottom and wherein the cover is coupled to the top of the sensor covering the diaphragm; and, a second cavity cut into a bottom of the cover wherein the second cavity is sized and positioned to surround the diaphragm.

Pressure sensors and methods of making the same

A motion-sensitive low-G MEMS acceleration switch, which is a MEMS switch that closes at low-g acceleration (e.g., sensitive to no more than 10 Gs), is proposed. Specifically, the low-G MEMS acceleration switch has a base, a sensor wafer with one or more proofmasses, an open circuit that includes two fixed electrodes, and a contact plate. During acceleration, one or more of the proofmasses move towards the base and connects the two fixed electrodes together, resulting in a closing of the circuit that detects the acceleration. Sensitivity to low-G acceleration is achieved by proper dimensioning of the proofmasses and one or more springs used to support the proofmasses in the switch.

Low-G MEMS acceleration switch

A piezoresistive sensor assembly is provided that has a flex circuit having at least one air flow aperture formed therein. A sensor die is coupled to an absolute support and the flex circuit. The sensor die has a diaphragm that deflects in response to air flow that flows through the air flow aperture and is incident on the diaphragm. The sensor die includes one or more gages positioned on or in the diaphragm.

Weatherized direct-mount absolute pressure sensor

An electronic apparatus is provided that has a core, an electronic circuit in the core and a lid. An ESD protection device is in the lid. The ESD protection device is coupled to the electronic circuit.

Integrated MEMS and ESD protection devices

A new high G-range damped acceleration sensor is proposed with a proof mass optimized for maximized, bi-directional and symmetrical damping to accommodate acceleration ranges above and beyond several thousand G's. In order to achieve the maximum, bi-directional and symmetrical damping, the high G-range acceleration sensor is designed to have minimum amount of mass in the proof mass while maximizing its surface areas. Such high G-range damped acceleration sensor can be applied to any application in which damping (or suppression of ringing) is desired at quite high frequencies.

Proof mass for maximized, bi-directional and symmetric damping in high g-range acceleration sensors

A multi-layer device is provided for connecting to an electrical unit enclosed within the multi-layer device. A first wafer has a first outer terminal and a second outer terminal with etch pits. A first insulator has a first surface bonded to the first wafer and a first inner terminal located on an opposing second surface. A second wafer has a first surface bonded to the second surface of the first insulating layer and includes a pillar electrically connected to the first wafer. A second insulator has a first surface bonded to a second surface of the second wafer and a second inner terminal located on the first surface of the second insulator. The first outer terminal is electrically connected to the first inner terminal, and the second outer terminal is electrically connected to the second inner terminal. The first and second outer terminals are adapted for connecting to an electrical unit. A reinforcement is positioned adjacent to at least one of the first and second outer and, inner terminals to provide for reinforcement of the at least one of the first and second outer and inner terminals.

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San Jose, CA, United States of America

Tom Kwa