Applied Materials, Inc.

Other

Tom K Cho

Jennifer Y Sun

Biraja Prasad Kanungo

Vahid Firouzdor

Juan Carlos Rocha-Alvarez

Ying Di Zhang

Yao-Hung Yang

Andrew Nguyen

Thomas E Nowak

Vedapuram S Achutharaman

Sanjeev Baluja

Yogananda Sarode Vishwanath

Scott A Hendrickson

Sudhir R Gondhalekar

Dustin Wenpin Ho

Hichem M'Saad

Siamak Salimian

Andrzei Kaszuba

Chien-Min Liao

Tetsuya Ishikawa

Ganesh Balasubramanian

Jun Zhao

Dale Robert Du Bois

Xin Sheng Guo

Andrzej Kaszuba

Daemian Raj

Alex Schreiber

Chun-Chung Chen

John M White

Jeonghoon Oh

Muhammad M Rasheed

Visweswaren Sivaramakrishnan

Kevin P Fairbairn

Charles N Dornfest

Thanh Ngoc Pham

Padmanabhan Krishnaraj

Zhong Qiang Hua

Hemant P Mungekar

Rolf A Guenther

Stefan A Wolff

Aniruddha Pal

Surinder S Bedi

Mario David Silvetti

Pyongwon Yim

Andrew S Yu

Indrajit Lahiri

Tao Hou

Sophia M Velastegui

Frank F Hooshdaran

Hsiu Yang

Jeevan Shanbhag

Shigeru Takehiro

Thomas Kring

Shagun P Maheshwari

Kartik Ramaswamy

Kenneth S Collins

Dmitry Lubomirsky

Deenesh Padhi

Shahid Rauf

Bok Hoen Kim

Eric Andrew Englhardt

Alexandros T Demos

Michael Santiago Cox

Girish Anant Dixit

Michael D Willwerth

Ajit Balakrishna

Derek R Witty

Jared Ahmad Lee

Canfeng Lai

Christopher S Ngai

Govinda Raj

Laxman Murugesh

Rongping Wang

Fernando Silveira

Lily L Pang

Jianmin Qiao

Michael P Karazim

Ramesh Gopalan

Robert Hirahara

Martin Jeff Salinas

Bradley J Howard

Khaled A Elsheref

Anand Kumar

Wendell Glen Boyd, Jr

Alan Tso

Ndanka O Mukuti

Rudolf Gujer

Yuri Trachuk

Josephine J Chang

Atsushi Tabata

Earl Hunter

Lun Tsuei

Steve H Kim

Michael Douglas

Ian Widlow

Padmanaban Krishnaraj

Michael J Mark

Pavel Staryuk

Hamid Mohiuddin

David Ganon

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

Ion beam sputtering with ion assisted deposition for coatings on chamber components

The present disclosure is directed to a system and method to identify and track parts of a semiconductor processing chamber, as well as the status of the parts, and store status information in a centralized location as status changes over time.

Method and system for improving the operation of semiconductor processing

A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises YAlOhaving a dielectric constant of 9.76+/&#x2212;up to 30% and a hermiticity of 4.4E-10 cm/s+/&#x2212;up to 30%.

Plasma erosion resistant rare-earth oxide based thin film coatings

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er&#x2014;Y composition, an Er&#x2014;Al&#x2014;Y composition, an Er&#x2014;Y&#x2014;Zr composition, and an Er&#x2014;Al composition.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 &#x3bc;m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF, ErAlO, ErAlO, and a ceramic compound comprising YAlOand a solid-solution of YO&#x2014;ZrO.

Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.

Brazed joint and semiconductor processing chamber component having the same

Certain embodiments provide a method and non-transitory computer readable medium having instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

Part-life estimation utilizing feature metrology

An RF plasma generator configured to ignite and maintain a plasma from one or more processing gases is disclosed. A switch mode power supply is configured to convert a DC voltage from a DC power source to an RF voltage. A resonance circuit is configured to deliver an amount of power to an ignited plasma from the switch mode power supply. A plasma controller is configured to operate the power supply to apply an RF voltage corresponding to the amount of power to the one or more processing gases through the resonance circuit. The RF voltage increases in amplitude and decreases in frequency until the one or more processing gasses are ignited into a plasma. Responsive to detecting ignition of the plasma, the plasma controller is further configured to continuously adjust the frequency of the switch mode power supply to deliver the amount of power to the ignited plasma. The amount of power is a substantially constant amount of power.

Method and apparatus for actively tuning a plasma power source

A sealing member is provided, including a plurality of nodes and a plurality of antinodes. Each sealing member can be rotated to expose nondamaged lobes for sealing, and prevents the sealing member from falling out of the lobed groove. A chamber is provided, including a groove that the sealing member is placed in. A method of rotating and placing the sealing member is provided, including a rotation to expose nondamaged portions of the sealing member.

Multinode multi-use O-ring and method for forming a seal

A method of reclaiming a used seal includes boiling the used seal in a liquid, and after boiling the used seal in the liquid, baking the used seal. The boiling the used seal may include boiling for a predetermined boiling time in the liquid, and the baking the used seal may include baking the used seal for a predetermined bake time at a predetermined temperature.

Method of reclaiming a seal

The present disclosure relates to systems and methods for semiconductor tool part tracking and kit verification. Data relating to part identification and performance are encoded to a unique code that is encoded into machine-readable form, such as a data matrix. A multi-dimensional array (MDA) of the data matrices of a group of parts is a 'golden MDA'. When assembled into a kit, the parts are scanned and compared to the golden MDA. If there's a match, a kit unique code is used to generate a kit data matrix. The part data matrix codes are provided to a database to determine if a part combination will cause a coupling effect, based on part usage history.

Methods and systems for multi-part authentication and tracking

An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of YAlO, ErO, ErAlO, and a ceramic compound comprising YAlOand a solid-solution of YO&#x2014;ZrO.

An article includes a body that is coated with a ceramic coating. The ceramic coating may include YOin a range between about 45 mol % to about 99 mol %, ZrOin a range between about 1 mol % to about 55 mol %, and AlOin a range between about 1 mol % to about 10 mol %. The ceramic coating may alternatively include YOin a range between about 45 mol % to about 99 mol % and AlOin a range between about 1 mol % to about 10 mol %. The ceramic coating may alternatively include YOin a range between about 45 mol % to about 99 mol % and ZrOin a range between about 1 mol % to about 55 mol %.

Rare-earth oxide based erosion resistant coatings for semiconductor application

The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one of more modules in a modular process chamber according to the present disclosure.

Symmetric chamber body design architecture to address variable process volume with improved flow uniformity/gas conductance

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Palo Alto, CA, United States of America

Tom K Cho