Micron Technology Incorporated

Tom Graettinger

Gurtej S Sandhu

Howard E Rhodes

Durai Vishak Nirmal Ramaswamy

Cem Basceri

Mark R Visokay

Dan Gealy

Kyu S Min

Ron Weimer

Steve Cummings

Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an active area defined by sidewalls of neighboring trenches. A layer of dielectric material is blanket deposited over the memory cell, and etched to form spacers on sidewalls of the active area. Dielectric material is formed over the active area, a charge trapping structure is formed over the dielectric material over the active area, and a control gate is formed over the charge trapping structure. In some embodiments, the charge trapping structure includes nanodots. In some embodiments, the width of the spacers is between about 130% and about 170% of the thickness of the dielectric material separating the charge trapping material and an upper surface of the active area.

Thickened sidewall dielectric for memory cell

A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuO) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

Integrated capacitors fabricated with conductive metal oxides

A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuO ) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

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Boise, ID, United States of America

Tom Graettinger