Asm IP Holding B.v.

Asm International N.v.

Asm IP Holdings B.v.

Other

Tom E Blomberg

Suvi P Haukka

Varun Sharma

Chiyu Zhu

Marko J Tuominen

Jan Willem Maes

Hannu Huotari

Eva E Tois

Raija H Matero

Linda Lindroos

Dieter Pierreux

Viljami J Pore

Vladimir Machkaoutsan

David Kurt De Roest

Hessel Sprey

Kees Van Der Jeugd

Lucia D'Urzo

Eric James Shero

Qi Xie

Dong Li

Jaakko Anttila

Jerry Peijun Chen

Brennan Milligan

Elina Färm

Jacob Huffman Woodruff

Robin Roelofs

Robert Huggare

Charles Dezelah

Michael Givens

Henri Jussila

Daniele Chiappe

Viraj Madhiwala

Jiyeon Kim

Vapor deposition processes such as atomic layer deposition (ALD) processes employing a deposition enhancing precursor can be used to form a variety of oxide and nitride films, including metal oxide, metal nitride, metal oxynitride, silicon oxide and silicon nitride films. For example, the methods can be used to deposit transition metal nitrides, transition metal oxides, and silicon oxides and nitrides. In some embodiments the deposition enhancing precursor comprises a Group II metal such as Mg, Sr, Ba or Ca. Atomic layer deposition processes may comprise a deposition cycle comprising a first sub-cycle in which a substrate is contacted with a deposition enhancing precursor and an oxygen or nitrogen reactant and a second sub-cycle in which the substrate is contacted with a metal or silicon precursor and an oxygen or nitrogen reactant. In some embodiments the methods advantageously enable improved thin film formation, for example increased deposition rates.

Deposition of oxides and nitrides

Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes

The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

Combination CVD/ALD method, source and pulse profile modification

To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Showerhead device for semiconductor processing system

The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

Silicon oxide deposition method

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

Atomic layer etching processes

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Atomic layer deposition of III-V compounds to form V-NAND devices

An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Fluorine-containing conductive films

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Vantaa, Finland

Tom E Blomberg