Novellus Systems Incorporated

Tom Dorsh

Ming Chu Li

Dennis Michael Hausmann

Shankar Swaminathan

Mandyam Sriram

Ramesh Chandrasekharan

Jon Henri

Hu Kang

Easwar Srinivasan

Thomas W Mountsier

Antonio Xavier

Thomas G Jewell

Bryan Schlief

Adrien Lavoie

Bart Jan Van Schravendijk

Michal Danek

Adrien LaVoie

Bart K Van Schravendijk

Michael Rumer

David E Reedy

Paul D Healey

Reed W Rosenberg

Jack Griswold

Michael Kwok Leung Ng

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Plasma activated conformal film deposition

A physical vapor deposition sputtering process for enhancing the &#x3c;0002&#x3e; preferred orientation of a titanium layer uses hydrogen before or during the deposition process. Using the oriented titanium layer as a base layer for a titanium, titanium nitride, aluminum interconnect stack results in formation of an aluminum layer with predominant &#x3c;111&#x3e; crystallographic orientation which provides enhanced resistance to electromigration. In one process, a mixture of an inert gas, usually argon, and hydrogen is used as the sputtering gas for PVD deposition of titanium in place of pure argon. Alternatively, titanium is deposited in a two-step process in which an initial burst of hydrogen is introduced into the reaction chamber in a separate, first step. Pure argon is used as the sputtering gas for the titanium deposition in a second step. The method is broadly applicable to the deposition of metallization layers.

PVD deposition process for enhanced properties of metal films

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Tom Dorsh