Memc Electronic Materials, Inc.

Tom Doane

Henry Frank Erk

Zhijian Pei

Anca Stefanescu

A process for detecting mechanical and mechanochemical defects in the surface or edge of a silicon wafer resulting from a wafer manufacturing process. The present process comprises treating a surface of the silicon wafer with an aqueous etch solution comprising hydrofluoric acid and an oxidizing agent, followed by optical inspection of the treated wafer surface prior to subjecting that surface to conventional mechanical or mechanochemical polishing. The present process affords the means by which to more efficient identify wafers having such defects, thus reducing wafer manufacturing time and cost.

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St. Charles, MO, United States of America

Tom Doane