Hewlett-packard Development Company, L.p.

Tom Cooney

Sadiq Bengali

S Jonathan Wang

John Chen

James Weaver

Edward Enciso

High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.

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Corvallis, OR, United States of America

Tom Cooney