Imec Vzw

Katholieke Universiteit Leuven

Universiteit Hasselt

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Tom Aernouts

Jef Poortmans

Frederik Christian Krebs

Stijn Lammar

Wenya Song

Peter Vanlaeke

Yinghuan Kuang

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide AlOor a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W·cmand at a temperature of the stack of layers of at most 100° C.

Method for forming of perovskite-based optoelectronic devices

Growing community of inventors

Westmeerbeek, Belgium

Tom Aernouts