Mitsubishi Cable Industries, Ltd.

Tokuzo Sukegawa

Hirotaka Ito

Kazuyuki Tadatomo

Shinichi Watabe

An inorganic article used as a container for holding a solution for crystal growth according to the present invention is provided by filling the pores of substrate having a porous inorganic structure with an inorganic material which has a melting point of 400.degree. to 900.degree. C. A liquid-phase epitaxy apparatus according to the present invention is comprised of a crucible made of the inorganic article or from a material selected from P-BN, quartz and sapphire and has an arrangement with less sliding contact. Thus, the dispersion of diffusive elements contained in a solution during the epitaxial growth is prevented. Accordingly, both the article and the apparatus of the present invention permit growth of crystals having high quality and less structural defects, thus contributing to the production of a semiconductor device made of materials having high vapor pressure.

Inorganic article for crystal growth and liquid-phase epitaxy apparatus

A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75. According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.

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Hamamatsu, Japan

Tokuzo Sukegawa