Nichia Corporation

Nichia Chemical Industries, Limited

Tokuya Kozaki

Shuji Nakamura

Hiroyuki Kiyoku

Kazuyuki Chocho

Naruhito Iwasa

Masahiko Sano

Shinichi Nagahama

Hitoshi Maegawa

Hiroaki Matsumura

Keiji Sakamoto

In the nitride semiconductor device of the present invention, an active layeris sandwiched between a p-type nitride semiconductor layerand an n-type nitride semiconductor layer. The active layerhas, at least, a barrier layerhaving an n-type impurity; a well layermade of a nitride semiconductor that includes In; and a barrier layerthat has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layerbecomes possible by arranging the barrier layernearest to the p-type layer side.

Nitride semiconductor device

In the nitride semiconductor device of the present invention, an active layeris sandwiched between a p-type nitride semiconductor layerand an n-type nitride semiconductor layer. The active layerhas, at least, a barrier layerhaving an n-type impurity, a well layermade of a nitride semiconductor that includes In; and a barrier layerthat has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layerbecomes possible by arranging the barrier layernearest to the p-type layer side.

A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer

A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 &#x3bc;m and the etching depth is below the thickness of the p-side cladding layer of 0.1 &#x3bc;m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 &#x3bc;m, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

Nitride semiconductor laser device

The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.

Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device

Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device

A nitride semiconductor device includes an n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein the active layer has a first barrier layer, a second barrier layer and a third barrier layer. The first barrier layer is nearest to the p-type nitride semiconductor layer among the first, second and third barrier layers. The second barrier layer is nearest to the n-type nitride semiconductor layer among the first, second and third barrier layers. The third barrier layer is between the first and second barrier layers, and includes an upper barrier layer that contacts with a p-side surface of the well layer and a lower barrier layer that contacts with an n-side surface of said well layer. The upper and lower barrier layers having different composition or impurity concentrations.

Growing community of inventors

Anan, Japan

Tokuya Kozaki