Nichia Corporation

Tokutaro Okabe

Koji Asada

Keisuke Higashitani

Yoshinori Miyamoto

Yuya Kagoshima

Chiaki Ozaki

A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 &#x3bc;m higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlGaN (0.03&#x2264;z&#x2264;0.15).

Method for manufacturing semiconductor device and semiconductor device

A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.

Nitride semiconductor light emitting element including electron blocking structure layer

A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer including: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than that of the well layer; and an electron blocking structure layer between the active layer and the p-side layer and including: a first electron blocking layer disposed between the p-side layer and the active layer and having a bandgap larger than that of the barrier layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer and having a bandgap larger than that of the barrier layer, but smaller than the bandgap of the first electron blocking layer, and an intermediate layer disposed therebetween and having a bandgap smaller than that of the second electron blocking layer.

Growing community of inventors

Tokushima, Japan

Tokutaro Okabe