Sharp Kabushiki Kaisha Corporation

Tokuo Yoshida

Tohru Okabe

Yasuaki Iwase

Shoji Okazaki

Akira Inoue

Masahiko Suzuki

Shinsuke Saida

Yoshimasa Chikama

Ryosuke Gunji

Shinji Ichikawa

Yoshihiro Nakada

Hiroharu Jinmura

Yoshifumi Ohta

Yoshiyuki Harumoto

Tetsuya Yamashita

Koji Tanimura

Yoshihiro Kohara

Okifumi Nakagawa

Yoshinobu Miyamoto

Yuuji Mizuno

Takuya Watanabe

Akira Tagawa

Masao Moriguchi

Hiroki Taniyama

Mayuko Sakamoto

Kohji Ariga

Yohsuke Kanzaki

Noriko Watanabe

Akiyoshi Fujii

Yukinobu Nakata

Kengo Hara

Hiroshi Sugimoto

Tetsunori Tanaka

Tetsuo Fujita

Takehisa Sakurai

Yohei Takeuchi

Yuhichi Saitoh

Yuichi Saito

Yosuke Kanzaki

Tatsuya Fujita

A display device includes: a sealing film provided so as to cover light-emitting elements at least partially constituting a display area and including a first inorganic film, an organic film, and a second inorganic film stacked in this order; and a first damming wall in a frame area around the display area, the first damming wall surrounding the display area and overlapping a peripheral portion of the organic film, wherein at least one inorganic insulation film in a TFT layer has an upwardly open, first opening at least in a part of an area between the display area and the first damming wall, and the organic film is provided so as to fill in the first opening.

Display device and method of manufacturing same

A display device includes the following: a resin substrate; a TFT layer disposed on the resin substrate, the TFT layer having a stack of, in sequence, a base coat film, a semiconductor film, a gate insulating film, a first metal film, an interlayer insulating film, a second metal film, and a flattening film; a light-emitting element disposed on the TFT layer and forming a display region; and a plurality of TFTs disposed in the TFT layer in the display region. The base coat film includes an amorphous silicon film disposed at least all over the display region.

Display device including frame region, and bending region around display region

An active matrix substrate including a resin substrate including a plurality of external connection terminals arranged near a display region, the active matrix substrate includes: a plurality of first lead wires each extending from one of the external connection terminals to the display region; and a plurality of second lead wires each extending from one of the external connection terminals to a separation line, the second lead wires being arranged with an arrangement pitch along the separation line, and the arrangement pitch of the second lead wires being greater than an arrangement pitch of the first lead wires.

Active matrix substrate, display device, and motherboard

A display device includes: a resin substrate; a TFT layer; and a light-emitting element. A bending portion is provided with a first resin film formed of the same material and in the same layer as those of a first flattening film, and the first resin film fills a slit. An upper face of the first resin film is provided with a plurality of first connection wiring lines formed of a third metal film, and the plurality of first connection wiring lines extend in parallel to each other in a direction intersecting the extending direction of the bending portion. The plurality of first connection wiring lines are electrically connected to a plurality of first lead-out wiring lines, respectively in a display region side of the slit, and electrically connected to a plurality of second lead-out wiring lines, respectively in a terminal portion side of the slit.

Display device

Provided is an organic EL display device including a resin substrate layer, a TFT layer provided on the resin substrate layer, and a light-emitting element that is provided on the TFT layer and constitutes a display region. The resin substrate layer includes a first resin layer, an inorganic layer, and a second resin layer, which are provided in that order from a side opposite to the TFT layer. The interior of the first resin layer contains a plurality of air bubbles.

Display device and method for manufacturing same where a resin layer containing air bubbles

Reliability of a resin substrate is further enhanced. A first resin layer is made of polymer resin having a long-axis direction. A second resin layer is made of polymer resin having a long-axis direction slanted with respect to the long-axis direction in a plan view.

The present application provides a display device and a driving method thereof which can drive a driving transistor with lower power consumption when displaying an image. An organic EL display device applies voltage to switch on/off a driving transistor (M) to a bottom gate electrode () of the driving transistor (M) having a double gate structure, and applies a data voltage (Vdata) depending on data signals to a top gate electrode () as back gate voltage (Vbg). With this configuration, variation width of the voltage value can be smaller in comparison with a case to apply the data voltage to the bottom gate electrode ().

Display device and driving method thereof

An active matrix substrate is provided with a gate driver including a multi-stage shift register (). Each stage of the multi-stage shift register has a plurality of oxide semiconductor TFTs, a first input terminal for receiving a set signal, a second input terminal for receiving a clock signal, a third input terminal for receiving a clear signal, and an output terminal for outputting a gate output signal to one of the plurality of gate bus lines. The clock signal and the clear signal have the same high-level potential, and the clock signal and the clear signal have the same low-level potential. The plurality of oxide semiconductor TFTs include a first TFT () having a back-gate structure. The main gate electrode of the first TFT () is coupled to the third input terminal or a negative power supply voltage VSS. The back-gate electrode of the first TFT has a potential set to a positive power supply voltage VDD or a ground potential GND.

Active matrix substrate, and liquid crystal display device provided with active matrix substrate

The disclosure provides a production method for an EL device including a base material, a TFT layer, and an EL layer; the production method including: forming at least a portion of the base material from a first resin film obtained by curing a first solution applied and a second resin film obtained by curing a second solution applied, wherein a viscosity of the first solution is made higher than a viscosity of the second solution.

Production method for EL device

A TFT circuit () includes a first node (N) to which a first low potential (Vc) is supplied, a depression-type first TFT () which is arranged between the first node (N) and low-potential wiring () for supplying a second low potential (Va) higher than the first low potential (Vc), and in which a drain terminal is connected to the first node, and a depression-type second TFT () which is arranged between the first TFT () and the low potential wiring () and in which a source terminal is connected to a source terminal of the first TFT, in which the first low potential (Vc) is supplied to a gate terminal of the second TFT, a second node (N) enterable a floating state is formed between the source terminal of the first TFT and the source terminal of the second TFT, and the second node (N) is connected to a sub-circuit (SC) which is settable a potential of the second node (N) to be lower than the second low potential (Va) and higher than the first low potential (Vc).

TFT circuit and shift register circuit

Each of the auxiliary capacitors () includes a capacitor line () comprised of the same material as the gate electrode () and provided in the same layer as the gate electrode (), the gate insulating film () provided so as to cover the capacitor line (), a capacitor intermediate layer () provided using the oxide semiconductor and provided on the gate insulating film () so as to overlap the capacitor line (), and a capacitor electrode () provided on the capacitor intermediate layer (), and the capacitor intermediate layer () is conductive.

Thin film transistor substrate and method for producing same

A display panel () includes a TFT substrate () in which a plurality of TFTs () are provided, a counter substrate () provided to face the TFT substrate (), and a display medium layer () provided between the TFT substrate () and the counter substrate (), a plurality of pixels being provided so that each of the plurality of pixels is associated with a corresponding one of the TFTs (), wherein an oxide semiconductor layer () is provided in each of the TFTs () as a channel, and an ultraviolet light absorbing layer () having a light transmitting property is provided in each of the pixels (P) so as to overlap the oxide semiconductor layer ().

Display panel and thin film transistor substrate

An active matrix substrate () includes a plurality of pixel electrodes () arranged in a matrix, and a plurality of TFTs () each connected to a corresponding one of the pixel electrodes (), and each including a gate electrode () provided on an insulating substrate (), a gate insulating film () covering the gate electrode (), a semiconductor layer () provided on the gate insulating film () and having a channel region (C) overlapping the gate electrode (), and a source electrode () and a drain electrode () of copper or copper alloy provided on the gate insulating film () and separated from each other by the channel region (C) of the semiconductor layer (). The semiconductor layer () is formed of an oxide semiconductor and covers the source electrode () and the drain electrode ().

Active matrix substrate and display panel

A diodeincludes a gate electrode, a gate insulating layerprovided on the gate electrode, at least one semiconductor layerprovided on the gate insulating layerand which includes a first regionand a second region, a first electrodewhich is provided on the first regionand which is electrically coupled to the first regionand the gate electrode, and a second electrodewhich is provided on the second regionand which is electrically coupled to the second region. The at least one semiconductor layerincludes a channel regionwhich extends above the gate electrodewith the intervention of the gate insulating layertherebetween, and a resistor regionwhich does not extend above the gate electrode. When the diodeis in an ON state, an electric current path is formed between the first electrodeand the second electrode, the electric current path including the channel regionand the resistor region

Semiconductor device

A semiconductor deviceaccording to the present invention includes an active layersupported on a substrateand having two channel regions, a source region, a drain region, and an intermediate regionformed between the two channel regions; a contact layerhaving a source contact region, a drain contact region, and an intermediate contact region; a source electrode; a drain electrode; an intermediate electrode; and a gate electrodefacing the two channel regions and the intermediate region through a gate insulating filminterposed therebetween. An entire portion of the intermediate electrodethat is located between the first channel regionand the second channel regionoverlaps the gate electrodethrough the intermediate regionand the gate insulating film

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Osaka, Japan

Tokuo Yoshida