Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electric Co., Ltd.

Tokuhiko Tamaki

Masashi Murakami

Yasuo Miyake

Yoshiaki Satou

Masafumi Kubota

Noboru Nomura

Masayuki Takase

Ryohei Miyagawa

Junji Hirase

Takayoshi Yamada

Kazuko Nishimura

Motonori Ishii

Shinichi Imai

Naoki Kotani

Hirohisa Ohtsuki

Yasunori Inoue

Ichiro Nakayama

Takeyoshi Tokuhara

Kenji Harafuji

Mitsuhiro Ohkuni

Yoshihiro Sato

Sanshiro Shishido

Hiroaki Nakaoka

Shinji Takeoka

Tatsuo Sugiyama

Naoki Shimasaki

Yoshiyuki Matsunaga

Shigeo Yoshii

Yuuko Tomekawa

Yoshiyuki Ohmori

Tsuyoshi Tanaka

Hideto Motomura

Yoshihisa Kato

Yoshinori Takami

Tadashi Kimura

Yasuhiko Adachi

Yutaka Nabeshima

Kosaku Saeki

Gen Okazaki

Kentaro Nakanishi

Akio Sebe

Atsuhiro Yamano

Yasuo Sakurai

Kenji Tateiwa

Koichi Kawashima

Mitsuhiro Okuni

Yoshimasa Inamoto

Takeshi Hidaka

A camera system including an imaging device; and a signal processor. The imaging device includes; a first imaging cell having a first photoelectric converter generating a first signal; and a second imaging cell having a second photoelectric converter generating a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the number of saturation charges by the first photoelectric converter is greater than the number of saturation charges by the second photoelectric converter. The capacitor causes the second number of saturation charges to become greater than the first number of saturation charges.

Imaging device

A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

Solid-state imaging device

An image pickup module including an imaging device which includes: a first photoelectric converter that converts incident light into first signal charges; a first node into which the first signal charges are input; a second photoelectric converter that converts incident light into second signal charges; and a second node into which the second signal charges are input. The image pickup module further including a signal processing circuit that processes an output signal from the imaging device, where an area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view, and capacitance of the first node is greater than capacitance of the second node.

An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.

An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.

Imaging device including photoelectric conversion layer

An imaging device includes: a first pixel including a first photoelectric converter that converts incident light into first signal charges, and a first charge storage node that accumulates the first signal charges; and a second pixel including a second photoelectric converter that converts incident light into second signal charges, and a second charge storage node that accumulates the second signal charges. An area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view. Capacitance of the first charge storage node is greater than capacitance of the second charge storage node.

An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Imaging device that generates multiple-exposure image data

An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.

An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.

An imaging device includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a counter electrode on the first surface; a first electrode on the second surface; a second electrode on the second surface, the second electrode being spaced from the first electrode; and an auxiliary electrode on the second surface between the first electrode and the second electrode. The auxiliary electrode is spaced from the first electrode and the second electrode, where a shortest distance between the first electrode and the auxiliary electrode is different from a shortest distance between the second electrode and the auxiliary electrode.

Imaging device and image acquisition device

An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

Photosensor

An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.

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Osaka, Japan

Tokuhiko Tamaki