Shin-etsu Handotai Co., Ltd.

Other

Tokio Takei

Susumu Nakamura

Takao Abe

Keiichi Okabe

Yasuaki Nakazato

Kazushi Nakazawa

Susumu Miyazaki

Yatsuo Ito

Hiroko Ota

Hajime Miyajima

Takao c/o Shin-Etsu Handotai Co Ltd Abe

The present invention provides a method for manufacturing a bonded wafer, which includes at least the steps of bonding a bond wafer and a base wafer, grinding an outer peripheral portion of the bonded bond wafer, etching off an unbonded portion of the ground bond wafer, and then reducing a thickness of the bond wafer, wherein, in the step of grinding the outer peripheral portion, the bonded bond wafer is ground so as to form a groove along the outer peripheral portion of the bond wafer to form an outer edge portion outside the groove; and in the subsequent step of etching, the outer edge portion is removed together with the groove portion of the bond wafer to form a terrace portion where the base wafer is exposed at the outer peripheral portion of the bonded wafer. Thus, it is possible to provide a method for manufacturing a bonded wafer, which can reduce the number of dimples formed in a terrace portion of a base wafer upon removing an outer peripheral portion of a bonded bond wafer.

Method for manufacturing bonded wafer and outer-peripheral grinding machine of bonded wafer

Production method for silicon wafer and SOI wafer, and SOI wafer

A method of manufacturing a bonding substrate is disclosed. An oxide film is formed on at least one of two semiconductor substrates, and the two substrates are brought into close contact with each other via the oxide film. The substrates are heat-treated in an oxidizing atmosphere in order to firmly join the substrates together. Subsequently, the peripheral portion of a device-fabricating substrate is ground to a predetermined thickness, and an unjoined portion at the periphery of the device-fabricating substrate is completely removed through etching. The device-fabricating substrate is then ground and/or polished in order to reduce the thickness of the device-fabricating substrate to a desired thickness. The step of grinding the peripheral portion of the device-fabricating substrate to a predetermined thickness is performed by relative and radial movement of a grinding stone from the peripheral portion of the substrate toward the center thereof. The method enables grinding of a peripheral portion of the device-fabricating substrate for the purpose of removing an unjoined portion such that the device-fabricating substrate is ground to as small a thickness as possible in order to increase productivity while reducing costs. The method also prevents damage from reaching the support substrate even when the device-fabricating substrate is ground to such a small thickness.

Method of manufacturing a bonding substrate

There is disclosed a wafer holding jig having a porous holding surface for vacuum-holding a semiconductor wafer while the wafer is ground or polished. The porosity of a center region of the holding surface is made larger than that of an outside region formed to surround the center region. The outer diameter of the center region is made less than that of the wafer, while the outer diameter of the outside region is made greater than that of the wafer. It is possible to prevent deterioration in machining accuracy, which deterioration would otherwise occur due to deformation of a wafer stemming from catch of dust or the like, or application of machining pressure to the wafer.

Wafer holding jig

A bonded wafer comprising a filmy bond wafer, a base wafer, and an intermediate silicon dioxide layer, wherein the periphery of the bond wafer is etched; this bonded wafer is made by: subjecting the bond wafer to an oxidation treatment to form an oxide film over it; joining the two wafers in a manner such that the oxide film-covered face of the bond wafer is put on the base wafer to thereby sandwich the oxide film between the wafers; heating the combined wafers to thereby create a bonding strength between the two wafers; grinding the exposed face of the bond; etching the periphery of the bond wafer to remove the portion which is not in contact with the base wafer; and polishing the exposed face of the bond wafer until it becomes a thin film.

Bonded wafer and method of manufacturing it

A new method of preparing an exceedingly flat substrate for forming semiconductor devices having an SOI structure is disclosed. In this process at least a first wafer made of silicon single crystal is concavely warped beforehand. A second silicon single crystal wafer is bonded to the concavely warped side of the first wafer with an oxide film interposed between the first and the second wafers. Subsequently the wafers are subjected to polishing and/or etching so that the second wafer bonded is thinned into a thin film to prepare a substrate for forming semiconductor devices having a SOI structure. At this time the polishing and/or etching cause the bonded wafers to be warped convexly to offset the concavity of the first wafer, resulting in realization of a precisely flat substrate for forming semiconductor devices having an SOI structure. Further, at the time of determining the magnitude of the warp of the first wafer beforehand, an approximate linear equation is used which shows a relationship between the warps formed before and after the formation of the oxide film.

Growing community of inventors

Nagano, Japan

Tokio Takei