Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Tokio Isogai

Hitoshi Yokono

Akira Ikegami

Hideo Arima

Hitoshi Oka

Fusaji Shoji

Masaaki Okunaka

Issei Takemoto

Nobuo Sato

Mitsuo Nakatani

Ryoichi Sudo

Fumio Kataoka

Shoichi Iwanaga

Osamu Miyazawa

Isamu Tanaka

Takanobu Noro

Akira Matsuo

Masayoshi Kaneyasu

Tadashi Saitoh

Kazuo Nate

Haruhiko Matsuyama

Katsuo Abe

Hirayoshi Tanei

Mitsuo Yamazaki

Noriyuki Taguchi

Isao Obara

Mitsuko Ito

Sumiyuki Midorikawa

Hiroshi Kikuchi

Toshio Kobayashi

Yasuo Hira

Kenji Nakamura

Haruo Suzuki

Mitsumasa Kojima

Hiromi Tosaki

Nobuyuki Sugishita

Toyofusa Yoshimura

Nobuo Nakagawa

Satoru Suzuki

Hideki Sakurai

Teruo Mozume

Ichiro Tsubokawa

Hiroshi Ohtsu

Kunihiro Matsukuma

Kyoko Kotsuka

Kiyoshi Kawabata

Mitumasa Kojima

Akira Ikagami

A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.n&lt;a, and hydrolytic condensation products thereof represented by the general formula (OR.sub.1).sub.n-1 M(L).sub.a-n --O--M(OR.sub.1).sub.n-1 (L).sub.a-n, (b) an organotin compound, and (c) a solvent.

Process for producing solar cells

A gas detecting apparatus incorporates a number of gas detecting elements which react with a variety of gases and exhibit gas sensitivities differing from one another in dependence on the gas species. The detection patterns obtained by quantitizing the detection outputs of the gas detecting elements are compared with a plurality of standard patterns prepared previously for assumed combinations of gas species and concentrations thereof. On the basis of the standard pattern which is same or most similar to the detection pattern, the gas species is identified.

Gas detecting apparatus

A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.

A light-sensitive polymer composition comprising a poly(amic acid), a special bisazide compound and an amine compound can give a film which has high sensitivity and in which portions exposed to light are not easily released by a developing solution at the time of development.

Light-sensitive polymer composition with poly(amic acid), bisazide, and

Heat-resistant silicone block polymer with a good flexibility obtained by reaction of an organosilsesquioxane with a silicone compound or organosiloxane in the presence of a basic catalyst in an organic solvent.

Heat-resistant silicone block polymer

An electrode material for semi-conductor device such as solar cells comprises Ag powders, at least one metal of zirconium, hafnium, vanadium, niobium, and tantalum, an organic binder, and an organic solvent, and, if necessary, glass, Pd powders and Pt powders. The electrodes are prepared from the electrode material by printing, drying and firing at a low temperature and have a low contact resistance without any junction breakage or increase in leak current.

Electrode material for semi-conductor devices

A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors having different gas selectivities. The gas selectivities, as a characteristic constant of the specific gas sensor, was previously determined. The measured output voltages and gas selectivities are then used for solving plural simultaneous equations for gas concentrations.

Gas detection device and method for detecting gas

A light- or radiation-sensitive polymer composition comprising (a) a poly(amic acid) having as a major component a repeating unit of the formula: ##STR1## (b) one or more light- or radiation-sensitive compounds having an amino group and an aromatic azide group or aromatic sulfonylazide group in one molecule, and if necessary (c) one or more photosensitizers and/or amine compounds having at least one unsaturated bonding, and/or (d) one or more compounds having at least two unsaturated bonding in one molecule, is highly sensitive to light and radiation and can give a precise relief pattern on a substrate. Further, a finally obtained polyimide film is excellent in heat resistance.

Radiation-sensitive poly(amic acid) polymer composition

A radiation sensitive polymer material having (a) one or more repeating units of the formula: ##STR1## wherein R is an alkyl group, a halogen atom, a hydrogen atom or a dimethylamino group, and (b) an addition polymerizable repeating unit derived from a compound having a CH.sub.2 .dbd.C&lt; group in the molecule, can give a positive type resist having excellent resistance to dry etching and being highly sensitive to radiation.

Radiation sensitive polymer materials

A porcelain composition comprising Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3, PbTiO.sub.3 and Pb(Yb.sub.1/2 Nb.sub.1/2)O.sub.3 preferably within the range as defined by closed area of A-B-C-D-A in the accompanying triangular diagram can give a sintered product by sintering at a temperature as low as 1000.degree. C. or lower. The resulting sintered product has a high relative dielectric constant and a small dielectric loss tangent.

Low temperature sintering porcelain composition

A transparent electroconductive film of lower resistance with a smaller content of remaining organic components and less pinholes than those of the conventional transparent electroconductive film is produced by applying a coating solution selected from (a) a coating solution comprising an inorganic indium compound free from a photosensitive group in the molecule or an inorganic tin compound free from a photosensitive group in the molecule, an organic ligand, and an organic solvent, (b) a coating solution comprising an organic indium compound free from a photosensitive group in the molecule, or an organic tin compound free from a photosensitive group in the molecule, and an organic solvent, and (c) the coating solution (a) or (b) further containing a dopant to the surface of a substrate, thereby forming a film thereon, and then irradiating the substrate with radiation capable of exciting organic groups, for example, ultraviolet rays in a state where the substrate is kept at a high temperature (100.degree.-600.degree. C.), and then baking the substrate at a high temperature.

Process for producing transparent electroconductive film

Metallic images of uniform quality can be formed on substrates having through-holes by a process using a positive type resist characterized by using as a coating solution for the substrate a solution of a photosensitive material of (a) at least one organic compound having at least one linkage of --M--M--M ).sub.n (M=Si, Ge or Sn; n=0, 1 or more) in the molecule or (b) a mixture of at least one organic compound (a) mentioned above and at least one photosensitizer, dissolved in a solvent such as a halogenated hydrocarbon, an aromatic hydrocarbon, a heterocyclic compound, or a mixture thereof, followed by irradiation with an actinic light through a photomask and electroless plating.

Process for forming metallic image

A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal.

Thermistor composition

During recyclic use of a chemical copper plating solution, counter anions to copper ions, anions formed by oxidation of a reducing agent, and carbon dioxide by absorption of carbon dioxide from air, which all have an inhibiting effect upon the plating, and also sodium ions having no inhibiting effect are accumulated in the plating solution. These accumulated ions can be removed by electrodialysis. Particularly, regeneration can be satisfactorily regenerated by adjusting the pH of used chemical plating solution to 2-11 before the electrodialysis, and using a selectively monovalent anion permeable membrane as an anion exchange membrane at the electrodialysis.

Process for regenerating chemical copper plating solution

There is described photosensitive polymer composition and a polyimide film-coated material made by applying the composition to a support, irradiating with ultraviolet and thereafter heating. The photosensitive polymer composition is prepared by adding a sensitizer to a photosensitive polyamide acid intermediate solution which is obtained by reacting in an inert solvent a first compound comprising 100 to 5% by weight of a photosensitive group-containing diamine and 0 to 95% by weight of a diamine having no photosensitive group, with a second compound comprising at least one compound selected from a tetracarboxylic acid dianhydride and a tricarboxylic acid anhydride monohalide.

Photosensitive compositions containing polyamides acid with

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Fujisawa, Japan

Tokio Isogai