Sony Corporation

Sony Semiconductor Solutions Corporation

Tokihisa Kaneguchi

Nobutoshi Fujii

Kenichi Aoyagi

Yoshiya Hagimoto

Yoshihisa Kagawa

Ikue Mitsuhashi

Masanaga Fukasawa

Hiroshi Takahashi

Taku Umebayashi

Toshihiko Hayashi

Ikuo Yoshihara

Yoshiaki Masuda

Hiroshi Yoshioka

Kan Shimizu

Hiroyasu Matsugai

Masaya Nagata

Keishi Inoue

Yoichi Otsuka

Naoto Sasaki

Isaya Kitamura

Mayoshi Aonuma

A solid-state imaging device that includes a first substrate, one or multiple second substrates, a first wiring layer, a second wiring layer, and a first alignment part. The first substrate includes a first semiconductor substrate with multiple photoelectric conversion sections, and a multilayer wiring layer. The one or multiple second substrates are attached to the first substrate with the multilayer wiring layer interposed therebetween. The first wiring layer is in the multilayer wiring layer and includes multiple first thin metal wires formed at substantially the same first pitches. The second wiring layer is stacked above the first wiring layer in the multilayer wiring layer and includes multiple second thin metal wires formed between the multiple first thin metal wires at substantially the same second pitches in a plan view. The first alignment part is formed above the second wiring layer in the multilayer wiring layer.

Solid-state imaging device

An imaging device including: a photoelectric converter; a protection member provided on a light incidence side of the photoelectric converter; a substrate opposed to the protection member with the photoelectric converter interposed therebetween and having a first surface on the photoelectric converter side and a second surface opposed to the first surface; a rewiring layer provided in a selective region of the second surface of the substrate; and a protective resin layer provided on the second surface of the substrate, the second surface of the substrate having an external terminal coupling region exposed from the protective resin layer, and a stress relaxation region exposed from the protective resin layer and disposed at a position different from the external terminal coupling region.

Imaging device with protective resin layer and stress relaxation region

A semiconductor unit includes: a semiconductor substrate; a first groove provided in the semiconductor substrate, having a first width Wand extending in a first direction; and a second groove provided in the semiconductor substrate in communication with the first groove, having a second width Wdifferent from the first width, and extending in a second direction that intersects the first direction, in which one of the first groove and the second groove is used for alignment.

Semiconductor unit

The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.

Semiconductor device and solid-state imaging device

A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Solid-state imaging device and method for producing the same

Growing community of inventors

Kanagawa, Japan

Tokihisa Kaneguchi