National Institute of Advanced Industrial Science and Technology

Kanto Kagaku Kabushiki Kaisha

Tokihiko Yokoshima

Masahiro Aoyagi

Yasuhiro Yamaji

Hiroshi Nakagawa

Katsuya Kikuchi

Masaru Kato

Ryota Iwai

Tomoaki Tokuhisa

An electroless gold plating solution with which one or more openings formed in a resist overlying a substrate can be filled in a short time, the openings having a width on the order of micrometer, in particular, 100 &#x3bc;m or smaller, in terms of the width of the exposed substrate area, and having a height of 3 &#x3bc;m or larger. The electroless gold plating solution contains a deposition accelerator for deposition in fine areas, and a microfine pattern of 100 &#x3bc;m or finer is formed therefrom.

Electroless gold plating solution for forming fine gold structure, method of forming fine gold structure using same, and fine gold structure formed using same

An electrode connection structure of a semiconductor chip is provided to realize a highly reliable electrical connection with low stress without using a bump. A conductive member may be used for such an electrode connection structure. A semiconductor device is provided wherein semiconductor chips are arranged in layers without providing the semiconductor chips with a through via, and a method is provided for manufacturing such a semiconductor device. A part or all of the surface of a horizontal recess, which is formed in an adhesive layer arranged between a first electrode of a lower layer and a second electrode of an upper layer, is provided with a conductive member for connecting the first electrode and the second electrode.

Electrode connection structure of semiconductor chip, conductive member, and semiconductor device and method for manufacturing the same

Growing community of inventors

Ibaraki, Japan

Tokihiko Yokoshima