Samsung Electronics Co., Ltd.

Tokashiki Ken

Hyung-joon Kwon

Myung-Hoon Jung

Woo-cheol Lee

Sang-min Lee

Myeong-Cheol Kim

Dong-Seok Lee

Sang-Kuk Kim

Chul-Ho Shin

Do-Haing Lee

Hak-sun Lee

Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas.

Magnetic devices and methods of manufacturing the same

A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of Hgas.

Magnetic device and method of manufacturing the same

A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

Method of manufacturing semiconductor device

Growing community of inventors

Seongnam-si, South Korea

Tokashiki Ken