Tdk Corporation

Akita Prefecture

Tohru Oikawa

Tomoyuki Sasaki

Tatsuo Shibata

Katsumichi Tagami

Kiyoshi Noguchi

Yohei Shiokawa

Keiji Koga

Hayato Koike

Susumu Haratani

Takashi Asatani

Toshio Suzuki

Masaki Kubota

A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.

Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element

A spin-current magnetization rotational element includes: a ferromagnetic metal layer; and a spin-orbit torque wiring that extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and is bonded to the ferromagnetic metal layer. A direction of a spin injected into the ferromagnetic metal layer from the spin-orbit torque wiring intersects a magnetization direction of the ferromagnetic metal layer. The ferromagnetic metal layer has shape anisotropy and has a demagnetizing field distribution caused by the shape anisotropy. The demagnetizing field distribution generates an easy magnetization rotational direction in which the magnetization of the ferromagnetic metal layer is most easily reversed. The easy magnetization rotational direction intersects the first direction in a plan view seen from the stacking direction.

Spin-current magnetization rotational element and element assembly

This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance elect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.

Magnetization rotational element, magnetoresistance effect element, and memory device

This spin current magnetization rotational element includes a second ferromagnetic metal layerhaving a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring layerthat is connected to the second ferromagnetic metal layeris larger than the spin resistance of the second ferromagnetic metal layer

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

Spin current assisted magnetoresistance effect device

A spin current magnetization rotational element includes: a first ferromagnetic metal layer having a variable magnetization direction; and a spin orbital torque wiring which is joined to the first ferromagnetic metal layer and extends in a direction crossing a direction perpendicular to a plane of the first ferromagnetic metal layer, wherein the spin orbital torque wiring is constituted of a non-magnetic material composed of elements of two or more kinds and a compositional proportion of the non-magnetic material has a non-uniform distribution between a first surface joined to the first ferromagnetic metal layer and a second surface located on a side opposite to the first surface.

Spin current magnetization rotational element, method of manufacturing the same, magnetoresistance effect element, and magnetic memory

This spin current magnetization rotational element includes a second ferromagnetic metal layer having a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring that is connected to the second ferromagnetic metal layer is larger than the spin resistance of the second ferromagnetic metal layer.

This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance effect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.

Spin-orbit torque magnetization rotational element

The magnetoresistive element includes a semiconductor channel layer, a pinned layer disposed on the semiconductor channel layer via a first tunnel layer, a free layer disposed on the semiconductor channel layer via a second tunnel layer, wherein the semiconductor channel layer includes a first region containing an interface with the first tunnel layer, a second region containing an interface with the second tunnel layer, and a third region, impurity concentrations in the first and second regions are higher than 1&#xd7;10cm, an impurity concentration in the third region is 1&#xd7;10cmor less, the first and second regions are separated by the third region, and the impurity concentrations in the first and second regions decrease in the thickness direction of the semiconductor channel layer from the interface between the semiconductor channel layer and the first tunnel layer and the interface between the semiconductor channel layer and the second tunnel layer.

Magnetoresistive element and spin-transport element

Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer; a first ferromagnetic layer disposed on the semiconductor channel layer; a second ferromagnetic layer disposed away from the first ferromagnetic layer; and a non-magnetic first reference electrode disposed away from the first ferromagnetic layer and the second ferromagnetic layer, wherein current is input from the second ferromagnetic layer to the first ferromagnetic layer through the semiconductor channel layer, a voltage between the second ferromagnetic layer and the first reference electrode is output.

Magnetoresistive element, spin MOSFET, magnetic sensor, and magnetic head

A spin transport device includes a semiconductor layer, a first ferromagnetic layerprovided on the semiconductor layervia a first tunnel barrier layerA, and a second ferromagnetic layerprovided on the semiconductor layervia a second tunnel barrier layerB to be spaced from the first ferromagnetic layer, and the semiconductor layerincludes a first region RI broadening in a direction away from the first ferromagnetic layeralong a direction orthogonal to a thickness direction from the first ferromagnetic layer, and a second region Rextending in a direction toward the second ferromagnetic layeralong the direction orthogonal to the thickness direction from the first ferromagnetic layer. The second region Rhas a relatively higher impurity concentration than the first region R

Spin transport device

A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. A thickness of the channel layer of the first section is different from a thickness of the channel layer of the second section and a resistance of an interface between the channel layer and the magnetization free layer is lower than a resistance of an interface between the channel layer and the magnetization-fixed layer.

Growing community of inventors

Tokyo, Japan

Tohru Oikawa