Denso Corporation

Nippondenso Co., Ltd.

Sumitomo Metal Ceramics Inc.

Sumitomo Metal (Smi) Electronics Devices, Inc.

Tohru Nomura

Yoshiyuki Miyase

Takashi Nagasaka

Norihisa Imaizumi

Yasutomi Asai

Tetsuto Yamagishi

Akihiko Naito

Nozomi Tanifuji

Takamasa Okumura

Koji Sawada

Takeshi Matsui

Yoshihiko Shiraishi

Masahiro Yamamoto

Masami Yamaoka

Tomoatsu Makino

Naohito Kato

Yoshihiro Shimoide

Rikiya Kamimura

Hiroshi Kasugai

Masataka Aoki

Kohmei Kawaguchi

Kasuhiro Yamada

Yoshiki Ishida

An electronic device includes: a substrate having first and second surfaces, wherein the first surface is opposite to the second surface; a first electronic element mounted on the first surface of the substrate; a second electronic element mounted on the second surface of the substrate; and a resin mold sealing the first electronic element and the first surface of the substrate. The resin mold further seals the second electronic element on the second surface of the substrate. The second surface of the substrate has a portion, which is exposed from the resin mold. The second electronic element is not disposed on the portion of the second surface.

Semiconductor device with resin mold

An electric circuit device and related manufacturing method are disclosed as having a case incorporating therein a substrate on which electric circuit elements are mounted. A sealant is filled in the case to cover the electric circuit elements and the substrate and is composed of a lower layer gel and an upper layer gel formed in a two-layer structure. The upper layer gel has a penetration equal to or less than 90 and the lower layer gel has a penetration greater than that of the upper layer gel to allow the upper layer gel to suppress vibration of a surface of the lower gel for thereby suppressing the deformation of the lower layer gel even in the presence of a tendency causing the electric circuit elements or the substrate to vibrate, preventing a degraded function in insulation, waterproof and vibrational relaxation of the lower layer gel.

Electric circuit device and related manufacturing method

A thick film circuit board that can be produced at a low cost, a method of producing the same, and an integrated circuit device. A first thick film circuit board has conducting layers of a copper-containing conductor fired at not higher than 750&#xb0; C., and includes conducting portions formed by using a silver-containing conductor. A second thick film circuit board has conductors that are formed in the through holes so as to close the openings of at least the one side thereof. The thick film circuit board is produced at a low cost and suppresses a drop in electric conductivity when it is in use.

Thick film circuit board, method of producing the same and integrated circuit device

A method for producing a multilayer ceramic circuit substrate having therein internal conductor patterns comprising W and/or Mo as a main component and surface conductor patterns comprising Cu as a main component formed onto a surface layer of the multilayer ceramic circuit substrate, wherein an intermediate metal layer comprising 40 to 90 wt. % of W and/or Mo and 10 to 60 wt. % of at least one element selected from the group consisting of Ir, Pt, Ti, and Cr is formed in through-holes of the surface layer and on parts of the surface layer in the vicinity of the through holes on the surface layer, whereby the internal conductor patterns and the surface conductor patterns are electrically connected through the intermediate metal layer. The alumina multilayer ceramic circuit substrate enables an excellent bonding strength and electrical conductivity between the internal conductors and the surface conductors and high precision wiring and miniaturization of an electronic circuit part.

Process for producing a multilayer ceramic circuit substrate

A thick film circuit board comprising an insulating substrate; conductor wiring layers of a conductive material containing an oxide and formed on the insulating substrate by printing and firing; a resistance layer of a resistive material having a selected sheet resistance, being chemically reactive with the oxide, and formed between and bridging the conductor wiring layers by printing and firing; and a conductive barrier layer interposed between each of the conductor wiring layers and the resistance layer to prevent chemical reaction between the oxide of the conductor wiring layers and the resistive material of the resistance layer.

Thick film circuit board

A multilayer ceramic circuit substrate having therein internal conductor patterns comprising W and/or Mo as a main component and surface conductor patterns comprising Cu as a main component formed onto a surface layer of the multilayer ceramic circuit substrate, wherein an intermediate metal layer comprising 40 to 90 wt. % of W and/or Mo and 10 to 60 wt. % of at least one element selected from the group consisting of Ir, Pt, Ti, and Cr is formed in through-holes of the surface layer and on parts of the surface layer in the vicinity of the through holes on the surface layer, whereby the internal conductor patterns and the surface conductor patterns are electrically connected through the intermediate metal layer. The alumina multilayer ceramic circuit substrate provides an excellent bonding strength and electrical conductivity between the internal conductors and the surface conductors and enables high precision wiring and miniaturization of an electronic circuit part.

Multilayer ceramic circuit substrate, process for producing the same,

A multilayer ceramic substrate having improved mechanical and electrical properties and suitable for use to form a hybrid integrated circuit and a process for the manufacture thereof. The multilayer ceramic substrate has at least one layer of a first conductor based on a refractory metal as an internal conductor layer and at least one layer of a Cu-based second conductor as a surface conductor layer, wherein the second conductor layer is connected to the first conductor layer through a metallic layer formed by coating with a metalloorganics paste containing one or more metals selected from the group consisting of Pt, Pd, Ni, Cu, Au, Rh, Ru, Re, Co, and Ir followed by firing in an inert or reducing atmosphere.

Multilayer ceramic substrate and manufacture thereof

Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

Semiconductor device constituting bipolar transistor

Growing community of inventors

Kariya, Japan

Tohru Nomura