Kabushiki Kaisha Toshiba

Tohru Maruyama

Riichiro Shirota

Fumitaka Arai

Takuya Futatsuyama

Seiichi Aritome

Kazuhiro Shimizu

Hiroaki Hazama

Masaki Kondo

Akira Goda

Toshiaki Edahiro

Norihisa Arai

Hirohisa Iizuka

Norihiro Fujita

Naoki Koido

Mitsuhiro Noguchi

Yukihito Oowaki

Hiroaki Tsunoda

Kiyomi Naruke

Mutsuo Morikado

A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

Nonvolatile semiconductor memory device

A non-volatile memory of a semiconductor device has a tunnel insulation film provided on the active area; a floating gate electrode provided on the tunnel insulation film; a control gate electrode provided over the floating gate electrode; and an inter-electrode insulation film provided between the floating gate electrode and the control gate electrode, wherein, in a section of the non-volatile memory cell in a channel width direction, a dimension of a top face of the active area in the channel width direction is equal to or less than a dimension of a top face of the tunnel insulation film in the channel width direction, and the dimension of the top face of the tunnel insulation film in the channel width direction is less than a dimension of a bottom face of the floating gate electrode in the channel width direction.

Semiconductor device and method for manufacturing the same

A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.

Semiconductor device

Semiconductor device having serially connected memory cell transistors provided between two current terminals

In a NAND cell type of EEPROM memory which has an STI (Shallow Trench Isolation) structure and uses memory cells into which two- or more-value data can be rewritten through the use of floating channel writing techniques, a plurality of floating gate electrodes are formed above the surface of an Si substrate with a tunnel oxide interposed therebetween. Trenches are formed in portions of the surface of the Si substrate each of which is located between floating gate electrodes arranged in one direction. In each trench, a conductive material is buried to form a buried electrode which is externally impressed with a low voltage. This boots the channel potential of nonselected cells, preventing erroneous writing without increasing the cost per bit. In particular, in such a structure that the buried electrode is formed only along each of the sidewalls of the trench, the voltages that are applied to the word line at write time can be rendered as low as possible by applying a negative potential to the buried electrode.

Nonvolatile semiconductor storage device having buried electrode within shallow trench

In a NAND cell type of EEPROM memory which has an STI (Shallow Trench Isolation) structure and uses memory cells into which two- or more-value data can be rewritten through the use of floating channel writing techniques, a plurality of floating gate electrodes are formed above the surface of an Si substrate with a tunnel oxide interposed therebetween. Trenches are formed in portions of the surface of the Si substrate each of which is located between floating gate electrodes arranged in one direction. In each trench, a conductive material is buried to form a buried electrode which is externally impressed with a low voltage. This boots the channel potential of nonselected cells, preventing erroneous writing without increasing the cost per bit.

Nonvolatile semiconductor storage device having buried electrode within

The semiconductor device comprises a substrate, a first conductive layer formed on the substrate with a first insulating layer inserted therebetween, thereby to constitute a first gate electrode, a second conductive layer selectively formed on the first gate electrode with a second insulating layer inserted therebetween, and a third conductive layer formed on the first and second conductive layer, thereby to constitute first and second electrodes respectively connected to the first and second conductive layers.

Semiconductor device and a manufacturing method thereof

Growing community of inventors

Kamakura, Japan

Tohru Maruyama