Hitachi, Ltd.

Hitachi-high-technologies Corporation

Other

Hitachi Ulsi Systems Co., Ltd.

Tohru Ishitani

Tsuyoshi Ohnishi

Kaoru Umemura

Hifumi Tamura

Hideo Todokoro

Satoshi Tomimatsu

Hidemi Koike

Yoshimi Kawanami

Hiroyasu Shichi

Toshio Kobayashi

Hisashi Takano

Hideo Tanabe

Kazuo Shiiki

Naoki Koyama

Isamu Yuito

Yuichi Madokoro

Eijin Moriwaki

Chiaki Ishikawa

Mitsugu Sato

Muneyuki Fukuda

Akira Shimase

Hideo Kashima

Mitsuo Tokuda

Eiichi Seya

Aritoshi Sugimoto

Shinichi Matsubara

Hiroyasu Kaga

Isamu Sekihara

Junzo Azuma

Shigeru Izawa

Hiroshi Yamaguchi

Tadashi Otaka

Atsushi Takane

Takashi Iizumi

Fumikazu Itoh

Hiroyuki Muto

Koichiro Takeuchi

Shoji Shukuri

Takashi Ohshima

Norihide Saho

Tomihiro Hashizume

Shinji Sakano

Koji Ishida

Noriaki Arai

Toshiyuki Aida

Yuichi Hamamura

Keiya Saito

Masao Tamura

Tsuneo Ichiguchi

Uki Kabasawa

Toshihiko Nakata

Hiroyuki Shinada

Hiroyuki Ito

Yoichi Ose

Masaaki Futamoto

Yoshinori Nakayama

Hiroshi Okano

Yasutsugu Usami

Ushio Kawabe

Yuko Sasaki

Shigeyuki Hosoki

Taku Ninomiya

Shunroku Taya

Takashi Kamimura

Moritoshi Yasunaga

Yuuichi Madokoro

Masahiro Yamaoka

Isao Ochiai

Megumi Aizawa

Tooru Habu

Hiroyasu Schichi

Tokuro Hirano

Kaoru Uemura

Hiroji Iwata

Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode () and the temperature of a gas injection port part () of a gas supply unit.

Gas field ionization ion source and ion beam device

A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

Method and apparatus for specimen fabrication

Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip () for generating ions; an emitter base mount () for supporting the emitter tip; an ionizing chamber which has an extraction electrode () opposed to the emitter tip and which is configured so as to surround the emitter tip (); and a gas supply tube () for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

Ion beam device

A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Gas field ion source, charged particle microscope, and apparatus

The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.

Charged particle beam orbit corrector and charged particle beam apparatus

It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.

Charged particle beam apparatus and sample manufacturing method

In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.

Methods for sample preparation and observation, charged particle apparatus

Image evaluation method capable of objectively evaluating the image resolution of a microscope image. An image resolution method is characterized in that resolution in partial regions of an image is obtained over an entire area of the image or a portion of the image, averaging is performed over the entire area of the image or the portion of the image, and the averaged value is established as the resolution evaluation value of the entire area of the image or the portion of the image. This method eliminates the subjective impressions of the evaluator from evaluation of microscope image resolution, so image resolution evaluation values of high accuracy and good repeatability can be obtained.

Image evaluation method and microscope

An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30&#xb0; C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Liquid metal ion gun

A focused ion beam apparatus enables an ion beam to be focused highly accurately on a sample at the beam spot position of the case of the absence of magnetic field without causing isotope separation of the ion beam on the sample, even when there is a magnetic field on the ion beam optical axis or the magnetic field fluctuates. The focused ion beam apparatus comprises a corrective magnetic field generating unitdisposed on the optical axis of the ion beamfor correcting the deflection of the ion beamdue to an external magnetic field. The corrective magnetic field generating unitincludes pole-piece pairsA andB, each of which having two pole piecesandorandthat are adjacent to each other with a gap d. The pole-piece pairsA andB are disposed opposite to each other with a gap g (&#x3e;d) across the optical axis of the ion beam. Each of the pole piecestois wound with an internal coil, and the pole-piece pairsA andB are each wound with an external coilin such a manner as to surround the internal coils

Focused ION beam apparatus

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Hitachinaka, Japan

Tohru Ishitani