Tdk Corporation

Nippon Steel Corporation

Tohru Inoue

Yoshitaka Sasaki

Akifumi Kamijima

Katsunori Osanai

Shigeki Tanemura

Atsushi Sano

Takeshi Takahashi

Makoto Yoshida

Kenichi Yoshida

Koichi Terunuma

Takashi Ota

Keitaro Otsuki

Akiji Higuchi

Takaaki Domon

Yosuke Miyaki

Yoshihiko Yano

Kenji Endou

Takashi Aoyagi

Jotaro Akiyama

Michihiko Nagumo

Naoki Okumura

A MEMS microphone includes a substrate, and a first conversion portion and a second conversion portion provided on the substrate, the first conversion portion and the second conversion portion convert sound into an electrical signal, the first conversion portion includes a first through hole, a first membrane covering the first through hole, and a first back plate facing the first membrane via a first air gap, the second conversion portion includes a second through hole, a second membrane covering the second through hole, and a second back plate facing the second membrane via a second air gap, and a dimension of the second air gap is greater than a dimension of the first air gap in a thickness direction of the substrate.

MEMS microphone module

MEMS microphone

A MEMS microphone includes a substrate, and a first conversion portion and a second conversion portion provided on the substrate, the first conversion portion and the second conversion portion convert sound into an electrical signal, the first conversion portion includes a first through hole, a first membrane covering the first through hole, and a first back plate facing the first membrane via a first air gap, the second conversion portion includes a second through hole, a second membrane covering the second through hole, and a second back plate facing the second membrane via a second air gap, and an area of the second membrane is 1.21 times or more and 2.25 times or less an area of the first membrane when viewed in a thickness direction of the substrate.

A MEMS switch includes a first signal line provided in a first beam, a first GND adjacent to the first signal line, a second signal line provided in a second beam, and a second GND adjacent to the second signal line. A contact terminal is fixed to any one of the first signal line and the second signal line and performs connection between the first signal line and the second signal line according to deformation of the first beam.

MEMS switch and electronic device

A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission lineis a high-frequency transmission lineto transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral partof a cross-section that is of the high-frequency transmission lineand that is perpendicular to a transmission direction of the alternating-current electric signal.

High-frequency transmission line, antenna and electronic circuit board

A high-frequency transmission line in which the alternating-current resistance is low and that is hard to disconnect is provided. A high-frequency transmission lineis a high-frequency transmission lineto transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a central partof a cross-section that is of the high-frequency transmission lineand that is perpendicular to a transmission direction of the alternating-current electric signal.

An active material capable of forming an electrochemical device excellent in its discharge capacity and rate characteristic is provided. The active material in accordance with a first aspect of the present invention comprises a compound particle containing a compound having a composition represented by the following chemical formula (1), a carbon layer covering the compound particle, and a carbon particle. The active material in accordance with a second aspect of the present invention comprises a carbon particle and a compound particle having an average primary particle size of 0.03 to 1.4 &#x3bc;m, being carried by the carbon particle, and containing a compound represented by the following chemical formula (1):LiMXO&#x2003;&#x2003;(1)where a satisfies 0.9&#x2266;a&#x2266;2, M denotes one species selected from the group consisting of Fe, Mn, Co, Ni, and VO, and X denotes one species selected from the group consisting of P, Si, S, V, and Ti.

Active material and method of manufacturing active material

A manufacturing method for a thin-film magnetic head including first and second magnetic layers, a gap layer, a thin-film coil, and a coil insulating layer for insulating neighboring ones of turns of the thin-film coil. The manufacturing method includes the steps of: forming the first magnetic layer; forming the gap layer on the first magnetic layer; forming the second magnetic layer on the gap layer; forming the thin-film coil; and forming the coil insulating layer. The coil insulating layer is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

Method of manufacturing a thin-film magnetic head

The present invention provides a method of manufacturing an active material comprising both &#x3b1;-LiVOPOand &#x3b2;-LiVOPO. The method of manufacturing an active material in accordance with the present invention comprises a hydrothermal synthesis step of heating a mixture containing a lithium source, a phosphate source, a vanadium source, and water and having a pH greater 7 but smaller than 12.7; and a firing step of firing the mixture after being heated under pressure in the hydrothermal synthesis step.

Method of manufacturing active material, active material, electrode, and lithium-ion secondary battery

A method of manufacturing a magnetic head that includes a reproducing head, a recording head, and an isolation film for magnetically isolating the reproducing head and the recording head from each other. The method includes the steps of: forming the reproducing head; forming the recording head; and forming the isolation film. The isolation film is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

A method of manufacturing a thin-film magnetic head, the thin-film magnetic head including a recording head, includes the steps of: forming a first magnetic layer; forming a recording gap layer on the first magnetic layer; forming a second magnetic layer on the recording gap layer; and forming a thin-film coil. The recording gap layer is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

A method of manufacturing a thin-film magnetic head, the thin-film magnetic head including a magnetoresistive element, first and second shield layers for shielding the magnetoresistive element, a first shield gap film provided between the magnetoresistive element and the first shield layer, and a second shield gap film provided between the magnetoresistive element and the second shield layer. The method includes the steps of forming the first shield layer, forming the first shield gap film on the first shield layer, forming the magnetoresistive element on the first shield gap film, forming the second shield gap film on the magnetoresistive element, and forming the second shield layer on the second shield gap film. At least one of the first and second shield gap films is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

A thin-film magnetic head comprises a reproducing head and a recording head. The reproducing head comprises: a GMR element; a bottom shield layer and a top shield layer for shielding the GMR element; conductive layers connected to the GMR element; and shield gap films formed between the shield layers. Each of the shield gap films is made up of a plurality of thin alumina films stacked that are formed by performing the step of forming a thin alumina film by low pressure CVD, for example, a plurality of times.

Thin-film magnetic head and method of manufacturing same

A read head includes: an MR element that detects a magnetic field; a pair of electrode layers for feeding a sense current to the MR element; and a bottom shield layer and a top shield layer that sandwich and shield the MR element and the electrode layers; a bottom insulating layer disposed between the MR element/the electrode layers and the bottom shield layer; a top insulating layer disposed between the MR element/the electrode layers and the top shield layer; a bottom semiconductor layer that is made up of a single layer and disposed between the electrode layers and the bottom shield layer, for connecting the electrode layers and the bottom shield layer; and a top semiconductor layer that is made up of a single layer and disposed between the electrode layers and the top shield layer, for connecting the electrode layers and the top shield layer.

Growing community of inventors

Tokyo, Japan

Tohru Inoue