Asm IP Holding B.v.

Asm America, Inc.

Asm IP Holdings B.v.

Todd Robert Dunn

Carl Louis White

Eric James Shero

Jerry Winkler

Michael W Halpin

Kyle Fondurulia

Herbert Terhorst

Mike Halpin

Mohith E Verghese

Jereld Lee Winkler

Fred Alokozai

Ankit Kimtee

Andrew M Yednak, Iii

Bhushan Zope

Dinkar Nandwana

Sokol Ibrani

Surojit Ganguli

Fred Pettinger

Dave Marquardt

Paul F Ma

John Kevin Shugrue

Raj Singu

Ruchik Jayeskumar Bhatt

Lucian C Jdira

Shankar Swaminathan

William George Petro

Shuyang Zhang

Michael Lee Manasco

Shubham Garg

George B Jackson

Jonathan Robert Bakke

Abhishek Mangoli

Mimoh Kwatra

Govindarajasekhar Singu

Christopher Wuester

Yingzong Bu

Aniket Chitale

Shuaidi Zhang

Rohan Rajeev Puranik

Melvin Verbass

Jacqueline Wrench

Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

Reactor manifolds

Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Methods and apparatus for cleaning a vessel

Weighted lift pin

A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Substrate susceptor using edge purging

A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Chemical source vessel with dip tube

An alignment fixture for a reactor system may comprise a fixture body comprising an inner perimeter at least partially defining a shape which comprises an inner space of the fixture body, wherein the inner space is configured to receive a susceptor of a reactor system; and/or a measuring protrusion coupled to the fixture body at a first position and protruding from the fixture body toward the inner space. The measuring protrusion may comprise an indicator between the fixture body and a measuring protrusion end of the measuring protrusion.

Alignment fixture for a reactor system

A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

Semiconductor processing apparatus and methods for monitoring and controlling a semiconductor processing apparatus

Reaction chamber base plate

A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

Channeled lift pin

A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may include: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

Laser alignment fixture for a reactor system

The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

Semiconductor deposition reactor manifolds

Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

Multi-zone reactor, system including the reactor, and method of using the same

Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate

Growing community of inventors

Cave Creek, AZ, United States of America

Todd Robert Dunn