4 Wave, Inc.

Other

Veeco Instruments Inc.

Kaufman & Robinson, Inc.

Todd Lanier Hylton

David Alan Baldwin

Harold R Kaufman

James R Kahn

Viacheslav V Zhurin

A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from a positive voltage source with respect to ground, a negative voltage source with respect to ground and a high frequency switch. At least one current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the substrate during one or more cycles of the a-symmetric bi-polar DC voltage pulse signal. A control system, coupled to the at least one current sensor, varies the ion current independently from the electron current. The ion and electron sources create a continuous plasma that is proximate the substrate and the biasing circuitry causes the substrate to alternatively attract ions and electrons from the plasma. The ions attracted from the plasma sputter etch the substrate. The electrons attracted from the plasma neutralize accumulated charge on the substrate.

System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal

In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.

Apparatus for sputter deposition

A multi-channel optical device includes a first plurality of optical structures formed simultaneously using vapor deposition on different regions of a common substrate. Each optical structure in the plurality is comprised of a plurality of thin-film layers. The thickness of each layer in a given optical structure corresponds to a wavelength associated with one of the channels. A reflector has a surface parallel to the common substrate, and a transport region is disposed between the first plurality of optical structures and the reflector. An aperture is disposed at one end of the transport region, and the first plurality of optical structures are disposed along a length of the transport region. When an input optical signal is provided to the aperture, the device functions as an optical demultiplexer and output optical signals associated with different ones of the channels are generated at separate positions along a length of the transport region. When input optical signals are applied to separate positions along the length of the transport region, the device functions as an optical multiplexer and those input optical signals are combined in the transport region and output as a combined optical output signal at the aperture.

Multi-channel optical filter and multiplexer formed from stacks of thin-film layers

A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate is disclosed. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target.

System and method for performing thin film deposition or chemical treatment using an energetic flux of neutral reactive molecular fragments, atoms or radicals

A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

System and method for making thin-film structures using a stepped profile mask

In accordance with one specific embodiment of the present invention, the apparatus for sputter deposition within an evacuated volume comprises a compact ion source to generate ions into which an ionizable gas is introduced and from which ions leave with directed energies near or below the sputtering threshold, a sputter target near that source and located within the beam of ions leaving that source, a sputter target with a grounded shield that defines the target portion exposed to sputtering, and a power supply to bias the target negative relative to ground so that ions are attracted to and sputter the target. Particles sputtered from the target are deposited on a deposition substrate separate from both the ion source and the sputter target. For an insulating target, the target is biased with a radiofrequency power supply and the bias has a mean negative value rather than a direct-current negative value relative to ground. The rate and energy with which the ions arrive at the target determine the rate with which that target is sputtered and the deposition rate on the substrate. In using a compact gridless ion source, the high pressure required for generating ions is confined to the ion source, reducing the pumping gas load. For ion energies at or near the sputtering threshold, the sputtering from extraneous hardware is reduced or eliminated. In addition, the target biases can be low enough to minimize the damage due to energetic neutrals that result from reflection of energetic target ions.

A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.

System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals

A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

System and method for controlling deposition thickness using a mask with a shadow that varies with respect to a target

A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

System and method for performing sputter deposition using a divergent ion beam source and a rotating substrate

A system and method for controlling a circumferential deposition thickness distribution on a substrate includes a motor that rotates the substrate and a position sensor that senses a position of the substrate. At least one deposition thickness sensor senses the deposition thickness of the substrate at multiple positions on a circumference of a circle centered about an axis of rotation of the substrate. At least one controller drives a vapor source used to emit material for a deposition on a substrate. The at least one controller is coupled to the position sensor and the deposition thickness sensor. The controller synchronously varies an emission rate of material from the vapor source with respect to the position of the substrate to control the circumferential deposition thickness distribution.

System and method for controlling deposition thickness by synchronously varying a sputtering rate of a target with respect to a position of a rotating substrate

A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate.

A system and method for controlling a deposition thickness distribution on a substrate includes a motor that rotates the substrate and at least one deposition thickness sensor that senses the deposition thickness on the rotating substrate at two or more radii. At least one actuator varies a shadow of a mask that is disposed over the rotating substrate, wherein the shadow has a surface area that is less than an unmasked surface area of the rotating substrate. A vapor source deposits material on the rotating substrate. A process controller is coupled to the thickness deposition sensor and the at least one actuator. In response to an output of the deposition thickness sensor, the process controller varies the shadow of the mask along a radius of the substrate to control the deposition thickness distribution.

System and method for controlling deposition thickness using a mask with a shadow that varies along a radius of a substrate

A system and method for simultaneously performing sputter deposition on a plurality of planar substrates. An ion current source generates an ion beam in which ions are directed toward a target. The target is formed from a section of a sphere. Each of the plurality of planar substrates has a deposition surface that is tangent to a surface of the sphere. In addition, a substrate that is a section of a sphere may be used. The deposition thickness across the spherically-shaped substrate is uniform.

System and method for performing sputter deposition using a spherical geometry

A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.

System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal

A system and method for performing sputter deposition on a substrate. First, second, and third divergent ion current sources generate first, second and third divergent ion beams, respectively. The substrate faces the first ion current source. The first target faces the second ion current source, and the second target faces the third ion current source. The central axis of each ion current source is orthogonal to the central axes of the other two ion current sources.

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Great Falls, VA, United States of America

Todd Lanier Hylton