Asml Netherlands B.v.

Todd J Davis

Theodore Allen Paxton

Todd David Hiar

Cassandra May Owen

Steven George Hansen

Wim Tjibbo Tel

James J Hunter

Hans Van Der Laan

A lithographic apparatus can include the following devices: a patterning system, a projection system, and a radiation beam inspection device. The patterning system can be configured to provide a patterned radiation beam. The projection system can be configured to project the patterned radiation beam onto a target portion of a substrate. Further, the radiation beam inspection device can be configured to inspect at least a part of the patterned radiation beam. In a substrate exposure position, the projection system is configured to expose a pattern of radiation on the substrate using the patterned radiation beam and the radiation beam device is configured to move the reflecting device away from a light path of the patterned radiation beam. In a radiation beam inspection position, the radiation beam inspection device is configured to move the reflecting device into the light path of the patterned radiation beam.

Lithographic apparatus and device manufacturing method with radiation beam inspection using moveable reflecting device

A lithographic method to enhance image resolution in a lithographic cluster using multiple projections and a lithographic cluster used to project multiple patterns to form images that are combined to form an image having enhanced resolution.

Reduced pitch multiple exposure process

A lithographic method to enhance image resolution in a lithographic cluster using multiple projections and a lithographic cluster used to project multiple patterns to form images that are combined to form a patterned image having enhanced resolution.

A method, computer program product, and apparatus configured to improve attribute uniformity of a substrate is disclosed. In an embodiment, the method involves calculating corrective data based on measured values of an attribute of a substrate processed by a lithographic exposure apparatus, the corrective data configured to at least partially correct non-uniformity of the values of the substrate attribute by controlling the temperature generated by a zone of a thermal plate used to heat or cool the substrate, and making the corrective data available to the thermal plate.

Lithographic attribute enhancement

An integrated lithographic fabrication cluster system, as presented herein, comprises an exposure apparatus to expose a pattern onto a substrate with an associated exposure controller to control the exposure apparatus and a track apparatus interconnecting a plurality of processing modules with an associated track controller to control the track apparatus. The cluster system also comprises a wafer handling apparatus coupled to the exposure apparatus and track apparatus that is configured to transfer substrates between the processing modules utilized by the exposure apparatus and track apparatus and a wafer handling controller to control the wafer handling apparatus. The cluster system further comprises a cluster controller that communicates control information to at least one of the exposure controller, the track controller, and the wafer handling controller to manage operations of the exposure apparatus, the track apparatus, and the wafer handling apparatus during the lithographic fabrication process.

Integrated lithographic fabrication cluster

Methods for creating a cross section of at least one feature located on a substrate are disclosed. The methods include coating the feature with a layer of contrast enhancing material, recoating the feature with a second material that is different from the contrast enhancing material, and milling the feature. The second material has substantially similar milling characteristics as the feature. The methods may further include creating an image of the feature and saving the image of the feature.

Methods to improve resolution of cross sectioned features created using an ion beam

A system, apparatus, and method for improving CD uniformity in lithographic system is presented herein. The system includes an exposure apparatus configured to expose substrates, a track apparatus that is operatively coupled to the exposure apparatus and a plurality of processing modules and apparatus. The system also includes a measuring device configured to measure attributes of the exposed and processed substrates and to assess whether the exposed and processed substrate attributes are uniform based on pre-specified substrate profile information. The system further includes a module configured to adaptively calculate corrective exposure data based on the measured attributes upon determining that said attributes are not uniform. The corrective exposure data is configured to correct for non-uniformities in the substrates by regulating the exposure dosage of the exposure apparatus. Once the substrates are assessed to achieve the desired uniformity, the substrates are exposed by the exposure apparatus in accordance with the corrective exposure data, the uniformity of the exposed substrate continues to be monitored and the dose corrections are updated as required to maintain uniformity.

Adaptive lithographic critical dimension enhancement

The present invention relates to a method for developing a photoresist pattern. The method consists of mixing a concentrated chemical solution with a solvent to obtain a diluted chemical solution of a predetermined concentration. In this method, the mixing is done in a fabrication facility where the substrates are processed. The diluted chemical solution is then applied onto the photoresist pattern. Analysis of the pattern is then carried out to detect any defects or pattern collapse on the substrate. In the event that defects and/or pattern collapse occur, the predetermined concentration is adjusted to reduce the phenomenon.

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Gilbert, AZ, United States of America

Todd J Davis