Omnivision Technologies, Inc.

Eastman-kodak Company

Todd J Anderson

John Paul McCarten

Joseph R Summa

Cristian A Tivarus

John N Border

Robert Michael Guidash

Eric Gordon Stevens

John Thomas Compton

Aaron Thomas Deever

Julie A Anderson

John P Mccarten

Christian Alexandru Tivarus

A system and method for determining and correcting for imaging device motion during an exposure is provided. According to various embodiments of the present invention, multiple sets of image pixels are defined on an image sensor, where each set of pixels is at least partially contained in the output image area of the image sensor. Signals from each set of image pixels are read out once or more during an exposure, motion estimates are computed using signal readouts from one or more sets of image pixels, and signal readouts from one or more sets of the image pixels are processed to form the final output image.

Determining and correcting for imaging device motion during an exposure

A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.

Back-illuminated CMOS image sensors

An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.

High gain read circuit for 3D integrated pixel

A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.

Active pixel sensor having two wafers

A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.

Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array

Remote telephone programmer for a VCR with infrared transmitter

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Fairport, NY, United States of America

Todd J Anderson