International Business Machines Corporation

Other

Todd Alan Christensen

John Edward Sheets, Ii

Derick Gardner Behrends

Travis Reynold Hebig

Anthony Gus Aipperspach

Michael Launsbach

Peter Thomas Freiburger

Chad Allen Adams

Daniel Mark Nelson

Elizabeth Lair Gerhard

David Paul Paulsen

Gregory John Uhlmann

Jesse Daniel Smith

Phil Christopher Paone

Terrance Wayne Kueper

Gerald Keith Bartley

Kirk David Peterson

William Paul Hovis

Karl Robert Erickson

Paul Eric Dahlen

Douglas Michael Dewanz

Richard Lee Donze

Amira Rozenfeld

Omer Heymann

Igor Arsovski

David W Siljenberg

Nghia Van Phan

Jeffrey Milton Scherer

Phil Christopher Felice Paone

Darryl John Becker

Harold Pilo

Jente Benedict Kuang

Philip Raymond Germann

Mark Owen Maxson

Andrew Benson Maki

George Maria Braceras

David Howard Allen

Fariborz Assaderaghi

Paul Allen Ganfield

David Michael Friend

Matthew James Paschal

George Francis Paulik

Salvatore Nicholas Storino

Louis Bernard Bushard

Michael James Rohn

Ryan Charles Kivimagi

Leland Leslie Day

John Sheets

Binta Minesh Patel

John Edward Sheet, Ii

Paul W Wong

Eric Marz

Ryan O'Neal Miller

John Edwards Sheets, Ii

Jayson K Wittrup

Murali Vaddigiri

Bryan Joe Talik

Data relating to one or more circuit paths may be collected during a design stage of a processor chip based on a design model. One or more delta values may be added to the one or more circuit paths of the design model. One or more broken circuit paths may be identified based on the one or more delta values. A target time for each of the one or more broken circuit paths may be adjusted.

Processor chip timing adjustment enhancement

A memory interface latch including a data NAND gate and a feedback gate can be created within an integrated circuit (IC). When a feedback node is driven low, the data NAND gate can drive an inverted value of a memory array bitline input to a data output of the memory interface latch within a time of one gate delay. A feedback gate can, in a functional mode, during one phase of a clock signal, drive the feedback node high and during the other phase of the clock signal, drive the feedback node to a complement the data output. The feedback gate can be also, in an LBIST write-through mode, drive the feedback node to the value of a WRITE_DATA input. The feedback gate can be also, in a fence mode, drive the feedback node to fixed logic value.

Memory interface latch with integrated write-through and fence functions

A system and integrated circuits are provided for determining performance metrics over a plurality of cycles of an input signal using on-chip diagnostic circuitry. The system comprises a trigger generation module configured to generate a trigger signal, and diagnostic circuitry coupled with the trigger generation module. The diagnostic circuitry comprises a memory comprising a plurality of data lines, and a plurality of delay elements, each delay element of the plurality of delay elements connected between consecutive data lines of the plurality of data lines. The diagnostic circuitry is configured to receive at least one input signal, and write, upon receiving the trigger signal, values on the plurality of data lines to the memory, thereby acquiring samples of a plurality of cycles of the input signal.

On-chip diagnostic circuitry monitoring multiple cycles of signal samples

Memory interface latch with integrated write-through function

A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuitry having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.

Implementing eFuse visual security of stored data using EDRAM

On a semiconductor die, a testing controller identifies a first partition unit with a first operating frequency lower than a second operating frequency of an adjacent second partition unit. A metal mask is added between one or more first header switches of the first partition unit and one or more second header switches of the second partition unit to allow the first partition unit to use a selection of the one or more second header switches for power distribution to the first partition unit.

Enhancing performance of one or more slower partitions of an integrated circuit to improve performance of the integrated circuit

A shielding and decoupling capacitor structure can be fabricated within an integrated circuit (IC) by forming recesses in a top surface of a dielectric layer and forming a trench in a top surface of an intra-metal dielectric portion of a metal layer deposited on the top surface of the dielectric layer. A bottom of the trench exposes the recesses. A bottom of each recess exposes a conductive structure. A first plate may be formed by depositing a conductive liner onto the bottom and side of the recess and onto the bottom and side of the trench. A conformal dielectric film may be deposited onto the first plate within the trench and recesses. A second plate may be formed by depositing an electrically conductive material within the trench and recesses over the conformal dielectric film. The conformal dielectric film electrically insulates the first and second plates from each other.

Integrated shielding and decoupling capacitor structure

A computing system, processing unit, and method are disclosed for detecting a maximum voltage power supply for performing memory testing. The method includes generating, using a sense amplifier of a processing unit and based on a timing of a received pulse signal, first and second drive signals that collectively indicate which of first and second voltages is greater, the first and second voltages produced by respective first and second power supplies. The method also includes coupling, based on the first and second drive signals, the power supply corresponding to the relatively greater voltage of the first and second voltages with the memory.

Detecting maximum voltage between multiple power supplies for memory testing

An electrostatic discharge (ESD) protection device to manage leakage current can, in response to a power good (PGOOD) signal, draw the gate terminal of an ESD clamp device to a voltage below ground. The device also drives an inverted copy of the PGOOD signal to a gated inverter, which can inhibit the gated inverter output from drawing the ESD clamp device gate terminal to ground. The ESD protection device also includes the ESD clamp device to, in response to the gate terminal of the ESD clamp device being drawn to a bias voltage less than ground, allow a leakage current to flow through the ESD clamp device that is less than a leakage current allowed to flow in response to the ESD clamp device gate terminal being drawn to ground.

Electrostatic discharge protection device with power management

Embodiments herein describe dummy gates disposed over a portion of a fin in finFETs. That is, instead of separating the dummy gates from the finFET structure, the fins may be extended and covered, at least partially, by the dummy gates. An insulative material is disposed between the dummy gate and the fin in order to form a decoupling capacitor. In one embodiment, the dummy gate overlaps a portion of the fin that is held at a voltage rail. Moreover, the dummy gate may be coupled to a different (e.g., opposite) voltage rail than rail coupled to the fin. For example, if the fin is coupled to Vthen the dummy gate is coupled to V, or vice versa. Thus, the capacitor formed using the fin and the dummy gate provides a decoupling capacitance between the power sources generating the voltage rails (i.e., Vand V).

FinFET power supply decoupling

A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuity having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.

A capacitor can be fabricated within an integrated circuit (IC) by creating, in a top surface of a dielectric layer of the IC, a recess having at least one side and a bottom, the bottom adjacent to a first conductive structure. A first plate of the capacitor may be formed by depositing a conductive liner onto the at least one side and the bottom of the recess. A conformal dielectric film may be deposited onto the first plate within the recess, and a second plate of the capacitor may be formed by filling a portion of the recess that is not filled by the conformal dielectric film with an electrically conductive material that is electrically insulated, by the conformal dielectric film, from the first plate.

High-density integrated circuit via capacitor

Growing community of inventors

Rochester, MN, United States of America

Todd Alan Christensen