Infineon Technologies Ag

Tobias Wurft

Wolfgang Raberg

Klemens Pruegl

Armin Satz

Dieter Suess

Hubert Brueckl

Anton Bachleitner Hofmann

An embodiment relates to a magnetic sensor device () comprising a magneto-resistive structure (). The magneto-resistive structure () comprises a magnetic free layer () configured to spontaneously generate a closed flux magnetization pattern in the free layer (). The magneto-resistive structure () also comprises a magnetic reference layer () having a non-closed flux reference magnetization pattern. The magnetic sensor device () further comprises a current generator () configured to generate an electric current in one or more layers of the magneto-resistive structure (). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.

Magnetic sensor device and method for a magnetic sensor device having a magneto-resistive structure

An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. The magneto-resistive structure also comprises a magnetic reference layer having a non-closed flux reference magnetization pattern. The magnetic sensor device further comprises a magnetic biasing structure configured to generate a biasing field in the magnetic free layer, the biasing field having a non-zero magnetic biasing field component perpendicular to the reference magnetization pattern.

Magnetic sensor device having a magneto-resistive structure that generates a vortex magnetization pattern

Growing community of inventors

Munich, Germany

Tobias Wurft