Hitachi Energy Ltd

Abb Research Ltd.

Hitachi Energy Switzerland Ag

Abb Power Grids Switzerland Ag

Abb Schweiz Ag

Abb Technology Ag

Tobias Wikstroem

Jan Vobecky

Didier Cottet

David Guillon

Hermann Amstutz

Umamaheswara Vemulapati

Thomas Stiasny

Thomas Setz

Jagoda Dobrzynska

Hendrik Ravener

Paul Commin

Norbert Meier

A reverse conducting power semiconductor device includes a plurality of thyristor cells and a freewheeling diode are integrated in a semiconductor wafer. The freewheeling diode includes a diode anode layer, a diode anode electrode, a diode cathode layer, and a diode cathode electrode. The diode cathode layer includes diode cathode layer segments, each of which is stripe-shaped and arranged within a corresponding stripe-shaped first diode anode layer segment such that a longitudinal main axis of each diode cathode layer segment extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments.

Reverse conducting power semiconductor device and method for manufacturing the same

A turn-off power semiconductor device includes first and second thyristor cells, a common gate contact and a plurality of stripe-shaped electrically conductive first gate runners. Each first gate runner has a first end portion, a second end portion opposite to the first end portion and a first connecting portion connecting the first end portion and the second end portion. The first end portion is directly connected to the common gate contact. The first gate electrode layer portions of all first thyristor cells are implemented as a first gate electrode layer. The second gate electrode layer portions of all second thyristor cells are implemented as a second gate electrode layer. The first gate electrode layer is directly connected to the common gate contact. At least the first connecting portion of each first gate runner is separated from the first gate electrode layer.

Turn-off power semiconductor device with gate runners

A power semiconductor device includes a semiconductor wafer, a thyristor structure, and a bipolar junction transistor. The thyristor structure includes a first emitter layer of a first conductivity type adjacent the first main side, a first base layer of a second conductivity type, a second base layer of the first conductivity type, a second emitter layer of the second conductivity type, a gate electrode, a first main electrode, and a second main electrode arranged. The bipolar junction transistor includes a base electrode electrically separated from the gate electrode, a third main electrode arranged on the first main side and a fourth main electrode arranged on the second main side. The first main electrode is electrically connected to the third main electrode and the second main electrode is electrically connected to the fourth main electrode.

Power semiconductor device comprising a thyristor and a bipolar junction transistor

A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.

Power semiconductor device with free-floating packaging concept

A power diode comprises a plurality of diode cells (). Each diode cell () comprises a first conductivity type first anode layer (), a first conductivity type second anode layer () having a lower doping concentration than the first anode layer () and being separated from an anode electrode layer () by the first anode layer (), a second conductivity type drift layer () forming a pn-junction with the second anode layer (), a second conductivity type cathode layer () being in direct contact with the cathode electrode layer (), and a cathode-side segmentation layer () being in direct contact with the cathode electrode layer (). A material of the cathode-side segmentation layer () is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (), is below 2·10cm, or a material of the cathode-side segmentation layer () is an insulating material. A horizontal cross-section through each diode cell () along a horizontal plane (K) comprises a first area where the horizontal plane (K) intersects the second anode layer () and a second area where the plane (K) intersects the drift layer ().

Segmented power diode structure with improved reverse recovery

An integrated gate-commutated thyristor (IGCT) includes a semiconductor wafer having a first main side and a second main side opposite to the first main side and a plurality of first type thyristor cells and second type thyristor cells. The cathode electrode of the first type thyristor cells forms an ohmic contact with the cathode region and the cathode electrode of the second type thyristor cells is insulated from the cathode region. A predefined percentage of second type thyristor cells of the overall amount of first type thyristor cells and second type thyristor cells in a segment ring is greater than 0% and less than or equal to 75%.

Integrated gate-commutated thyristor (IGCT)

The invention relates to a semi-fabricated switching device comprising a semiconductor element and a housing comprising a spring system with a ring-shaped washer laterally surrounding the semiconductor element for clamping the semiconductor element between two pole pieces. The washer is deflectable between the pole pieces by a first deflection element, which contacts the washer in a first contact area on a first side, and by a second deflection element, which contacts the washer in a second contact area on a second side. The first contact area is displaced to the second contact area. The first and second deflection element can deflect the washer such that in clamped condition an electrical contact is achievable between the pole pieces and the semiconductor element.

Semiconductor switching device

The present disclosure provides a semiconductor switching device including a substrate having deposited thereon a cathode, an anode and a gate of the semiconductor switching device, and a connection means for electrically connecting the cathode in the gate of the semiconductor switching device to an external circuit unit. The connection includes a cathode-gate connection unit having a coaxial structure including a gate conductor and a cathode conductor for electrically connecting the cathode and the gate of the semiconductor switching device to the external circuit unit.

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Egliswil, Switzerland

Tobias Wikstroem