Nexperia B.v.

Tobias Sprogies

Wolfgang Schnitt

Hans-Martin Ritter

Steffen Holland

Zhihao Pan

Hans-Juergen Funke

Thomas Igel-Holtzendorff

Rolf Brenner

Frank Burmeister

Jochen Wynants

Joachim Utzig

Jan Fischer

Rüdiger Weber

The present disclosure relates to a semiconductor chip scale package including a semiconductor die. The semiconductor die has a first major surface opposing a second major surface, a plurality of side walls extending between the first major surface and second major surface, a plurality of electrical contacts arranged on the second major surface of the semiconductor die, and an insulating material disposed on the plurality of side walls and on the first major surface. The insulating material includes a machine readable identifier by which a semiconductor chip scale packaging type is identifiable by an identification apparatus that reads the machine readable identifier, and the machine readable identifier includes a colour component.

Semiconductor chip scale package and method

The disclosure relates to chips scale packages and methods of forming such packages or an array of such packages. The semiconductor chip scale package comprises: a semiconductor die, comprising: a first major surface opposing a second major surface; a plurality side walls extending between the first major surface and the second major surface; a plurality of electrical contacts arranged on the second major surface of the semiconductor die; and an inorganic insulating material arranged on the plurality of side walls and on the first major surface.

Chip scale package

A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Multi-trench semiconductor device and method of manufacture thereof

A method of protecting sidewalls a plurality of semiconductor devices is disclosed. The method includes fabricating the plurality of semiconductor devices on a semiconductor wafer, etching to form a trench grid network on the backside of the semiconductor wafer. The trench grid network demarcate physical boundaries of each of the plurality of semiconductor devices. The method also includes depositing a protective layer on the backside and etching to remove the protective layer from horizontal surfaces and to singulate each of the plurality of semiconductor devices from the semiconductor wafer.

Semiconductor device with protected sidewalls and methods of manufacturing thereof

Growing community of inventors

Hamburg, Germany

Tobias Sprogies